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Temperature dependence of hole spin relaxation in ultrathin InAs monolayers

文献类型：期刊论文

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作者Li T; Zhang XH; Zhu YG; Huang X; Han LF; Shang XJ; Ni HQ; Niu ZC; Zhang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xinhuiz@semi.ac.cn
刊名physica e-low-dimensional systems & nanostructures ; PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
出版日期2010 ; 2010
卷号42期号:5页码:1597-1600
关键词Ultrathin InAs monolayer Ultrathin Inas Monolayer Hole Spin Relaxation Dp Mechanism Semiconductor Quantum Dots Wells Gaas Hole spin relaxation DP mechanism SEMICONDUCTOR QUANTUM DOTS WELLS GAAS
通讯作者zhang, xh, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: xinhuiz@semi.ac.cn
合作状况其它
英文摘要the temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin inas monolayers has been investigated. it has been suggested that d'yakonov-perel (dp) mechanism dominates the spin relaxation process at both low and high temperature regimes. the appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. the results suggest that hole spins are also promising for building solid-state qubits.; The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs monolayers has been investigated. It has been suggested that D'yakonov-Perel (DP) mechanism dominates the spin relaxation process at both low and high temperature regimes. The appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of Coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. Increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. The results suggest that hole spins are also promising for building solid-state qubits.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-28t00:36:59z no. of bitstreams: 1 temperature dependence of hole spin relaxation in ultrathin inas monolayers.pdf: 323989 bytes, checksum: f4cc6c97dad211c5e65d23fb656fba2c (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-28t00:37:24z (gmt) no. of bitstreams: 1 temperature dependence of hole spin relaxation in ultrathin inas monolayers.pdf: 323989 bytes, checksum: f4cc6c97dad211c5e65d23fb656fba2c (md5); made available in dspace on 2010-04-28t00:37:24z (gmt). no. of bitstreams: 1 temperature dependence of hole spin relaxation in ultrathin inas monolayers.pdf: 323989 bytes, checksum: f4cc6c97dad211c5e65d23fb656fba2c (md5) previous issue date: 2010; national natural science foundation of china 10674131 60625405 10734060 ; national basic research program of china 2007cb924904; 其它
学科主题半导体物理 ; 半导体物理
收录类别SCI
资助信息national natural science foundation of china 10674131 60625405 10734060 ; national basic research program of china 2007cb924904
语种英语 ; 英语
资助机构National Natural Science Foundation of China 10674131 60625405 10734060 ; National Basic Research Program of China 2007CB924904
公开日期2010-04-28 ; 2010-04-28 ; 2010-10-15
源URL[http://ir.semi.ac.cn/handle/172111/11200]  
专题半导体研究所_半导体超晶格国家重点实验室
通讯作者Zhang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xinhuiz@semi.ac.cn
推荐引用方式
GB/T 7714		 Li T,Zhang XH,Zhu YG,et al. Temperature dependence of hole spin relaxation in ultrathin InAs monolayers, Temperature dependence of hole spin relaxation in ultrathin InAs monolayers[J]. physica e-low-dimensional systems & nanostructures, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2010, 2010,42, 42(5):1597-1600, 1597-1600.
APA Li T.,Zhang XH.,Zhu YG.,Huang X.,Han LF.,...&Zhang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xinhuiz@semi.ac.cn.(2010).Temperature dependence of hole spin relaxation in ultrathin InAs monolayers.physica e-low-dimensional systems & nanostructures,42(5),1597-1600.
MLA Li T,et al."Temperature dependence of hole spin relaxation in ultrathin InAs monolayers".physica e-low-dimensional systems & nanostructures 42.5(2010):1597-1600.

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来源：半导体研究所

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