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The novel facet coating technology for 808nm semiconductor laser (EI CONFERENCE)

文献类型：会议论文

作者Liu Y.; Qin L.; Li Z.; Li Z.; Wang L.; Wang L.; Wang L.; Liu Y.; Liu Y.
出版日期2010
会议名称2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010, July 28, 2010 - August 1, 2010
会议地点Harbin, China
关键词A novel facet coating technology is presented by studying catastrophic optical mirror damage mechanism of semiconductor laser. In this technology semiconductor laser are cleaved in the air and the surface oxide layer is removed with a low energy ion source flowed immediately by coating the facet with thin ZnSe layer of 20 nm. The function of this layer is to protect semiconductor laser facet and prevent impurity particles diffusing to the facet. Finally the facet is coated with oxidative optical film. The test results show that the output power of the semiconductor laser with the ZnSe coated layer is 13% higher than that of the Si coated layer and 47% higher than that of the oxide coated film. The device coated oxide film is damaged when current is 4.5 A and the device coated with Si layer is damaged when current is 5.5 A the final failed device is coated with ZnSe layer. In conclusion the method of coating ZnSe layer on the semiconductor laser facet can prevent effectively the catastrophic optical mirror damage and increase the output power of semiconductor lasers. 2010 IEEE.
页码106-108
收录类别EI
源URL[http://ir.ciomp.ac.cn/handle/181722/32952]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式
GB/T 7714		 Liu Y.,Qin L.,Li Z.,et al. The novel facet coating technology for 808nm semiconductor laser (EI CONFERENCE)[C]. 见:2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010, July 28, 2010 - August 1, 2010. Harbin, China.

入库方式： OAI收割

来源：长春光学精密机械与物理研究所

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