Study of the fabrication of ZnO-TFT (EI CONFERENCE)
文献类型：会议论文
| 作者 | Wang C.
|
| 出版日期 | 2007 |
| 会议名称 | Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007 |
| 会议地点 | Shanghai, China |
| 关键词 | Znic Oxide (ZnO) as a shorter wavelength luminescent material concerning its outstanding properties of a wide band-gap semiconductor it can be used as the active channel layer to fabricate thin film transistor (TFT) and transparent thin film transistor(TTFT). In this paper we introduced ZnO-TFT using different substrate material insulator material electrode material of gate source and drain in its device. |
| 页码 | 1194-1195 |
| 收录类别 | EI |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/32979]  |
| 专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文 |
| 推荐引用方式 GB/T 7714 | Wang C.. Study of the fabrication of ZnO-TFT (EI CONFERENCE)[C]. 见:Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007. Shanghai, China. |
入库方式： OAI收割
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