Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser
文献类型：期刊论文
| ; | |
| 作者 | Zhu YH (Zhu Yuan-Hui); Xu Q (Xu Qiang); Fan WJ (Fan Wei-Jun); Wang JW (Wang Jian-Wei); Zhu, YH, Nanyang Technol Univ, Sch EEE, 50 Nanyang Ave, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg |
| 刊名 | journal of applied physics
 ; JOURNAL OF APPLIED PHYSICS
|
| 出版日期 | 2010 ; 2010 |
| 卷号 | 107期号:7页码:art. no. 073108 |
| 关键词 | ALLOYS Alloys Ge GE |
| 通讯作者 | zhu, yh, nanyang technol univ, sch eee, 50 nanyang ave, singapore 639798, singapore. 电子邮箱地址: ewjfan@ntu.edu.sg |
| 合作状况 | 国际 |
| 英文摘要 | using effective-mass hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the gamma-conduction and l-conduction subbands of gesn/gesisn strained quantum well structure with an arbitrary composition. our theoretical model suggests that the band structure could be widely modified to be type i, negative-gap or indirect-gap type ii quantum well by changing the mole fraction of alpha-sn and si in the well and barrier layers, respectively. the optical gain spectrum in the type i quantum well system is calculated, taking into account the electrons leakage from the gamma-valley to l-valley of the conduction band. we found that by increasing the mole fraction of alpha-sn in the barrier layer and not in the well layer, an increase in the tensile strain effect can significantly enhance the transition probability, and a decrease in si composition in the barrier layer, which lowers the band edge of gamma-conduction subbands, also comes to a larger optical gain.; Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the Gamma-conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band structure could be widely modified to be type I, negative-gap or indirect-gap type II quantum well by changing the mole fraction of alpha-Sn and Si in the well and barrier layers, respectively. The optical gain spectrum in the type I quantum well system is calculated, taking into account the electrons leakage from the Gamma-valley to L-valley of the conduction band. We found that by increasing the mole fraction of alpha-Sn in the barrier layer and not in the well layer, an increase in the tensile strain effect can significantly enhance the transition probability, and a decrease in Si composition in the barrier layer, which lowers the band edge of Gamma-conduction subbands, also comes to a larger optical gain.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-07t13:37:25z no. of bitstreams: 1 theoretical gain of strained gesn0.02ge1-x-y ' sixsny ' quantum well laser .pdf: 492650 bytes, checksum: cc4d7cac75908cea3b315ac2e38c20d7 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-07t13:42:41z (gmt) no. of bitstreams: 1 theoretical gain of strained gesn0.02ge1-x-y ' sixsny ' quantum well laser .pdf: 492650 bytes, checksum: cc4d7cac75908cea3b315ac2e38c20d7 (md5); made available in dspace on 2010-05-07t13:42:42z (gmt). no. of bitstreams: 1 theoretical gain of strained gesn0.02ge1-x-y ' sixsny ' quantum well laser .pdf: 492650 bytes, checksum: cc4d7cac75908cea3b315ac2e38c20d7 (md5) previous issue date: 2010; 国际 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2010-05-07 ; 2010-05-07 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11226]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Zhu, YH, Nanyang Technol Univ, Sch EEE, 50 Nanyang Ave, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg |
| 推荐引用方式 GB/T 7714 | Zhu YH ,Xu Q ,Fan WJ ,et al. Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser, Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser[J]. journal of applied physics, JOURNAL OF APPLIED PHYSICS,2010, 2010,107, 107(7):art. no. 073108, Art. No. 073108. |
| APA | Zhu YH ,Xu Q ,Fan WJ ,Wang JW ,&Zhu, YH, Nanyang Technol Univ, Sch EEE, 50 Nanyang Ave, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg.(2010).Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser.journal of applied physics,107(7),art. no. 073108. |
| MLA | Zhu YH ,et al."Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser".journal of applied physics 107.7(2010):art. no. 073108. |
入库方式： OAI收割
来源：半导体研究所
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