中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 半导体研究所
  3. 中国科学院半导体研究所
  4. 半导体超晶格国家重点实验室
Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs

文献类型：期刊论文

;
作者Luo J (Luo Jing); Zheng HZ (Zheng HouZhi); Shen C (Shen Chao); Zhang H (Zhang Hao); Zhu K (Zhu Ke); Zhu; H (Zhu Hui); Liu J (Liu Jian); Li GR (Li GuiRong); Ji Y (Ji Yang)
刊名science china-physics mechanics & astronomy ; SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
出版日期2010 ; 2010
卷号53期号:5页码:779-782
关键词dilute magnetic semiconductor Dilute Magnetic Semiconductor Magneto-crystalline Anisotropy Time-resolved Kerr Rotation Coherent Precession magneto-crystalline anisotropy time-resolved Kerr rotation coherent precession
通讯作者zheng, hz, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: hzzheng@red.semi.ac.cn
合作状况其它
英文摘要we report that, by linearly polarized pumping of different wavelengths, kerr transients appear at zero magnetic field only in the case when gamnas samples are initialized at 3 k by first applying a 0.8 tesla field and then returning to zero field. we find that, instead of magnetization precession, the near-band gap excitation induces a coherent out-of-plane turning of magnetization, which shows very long relaxation dynamics with no precession. when photon energy increases, the peak value of the kerr transient increases, but it decays rapidly to the original slow transient seen under the near-band-gap excitation.; We report that, by linearly polarized pumping of different wavelengths, Kerr transients appear at zero magnetic field only in the case when GaMnAs samples are initialized at 3 K by first applying a 0.8 Tesla field and then returning to zero field. We find that, instead of magnetization precession, the near-band gap excitation induces a coherent out-of-plane turning of magnetization, which shows very long relaxation dynamics with no precession. When photon energy increases, the peak value of the Kerr transient increases, but it decays rapidly to the original slow transient seen under the near-band-gap excitation.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-24t05:34:49z no. of bitstreams: 1 ultrafast photo-induced turning of magnetization and its relaxation dynamics in gamnas.pdf: 634007 bytes, checksum: 725308005155f893439c1af4306adf95 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-24t07:15:54z (gmt) no. of bitstreams: 1 ultrafast photo-induced turning of magnetization and its relaxation dynamics in gamnas.pdf: 634007 bytes, checksum: 725308005155f893439c1af4306adf95 (md5); made available in dspace on 2010-05-24t07:15:54z (gmt). no. of bitstreams: 1 ultrafast photo-induced turning of magnetization and its relaxation dynamics in gamnas.pdf: 634007 bytes, checksum: 725308005155f893439c1af4306adf95 (md5) previous issue date: 2010; national basic research program of china 2006cb932801 2007cb924903 2007cb924904 chinese academy of sciences kjcx.yw.w09 national natural science foundation of china 60836002 10674130 6052100; 其它
学科主题半导体物理 ; 半导体物理
收录类别SCI
资助信息national basic research program of china 2006cb932801 2007cb924903 2007cb924904 chinese academy of sciences kjcx.yw.w09 national natural science foundation of china 60836002 10674130 6052100
语种英语 ; 英语
资助机构National Basic Research Program of China 2006CB932801 2007CB924903 2007CB924904 Chinese Academy of Sciences KJCX.YW.W09 National Natural Science Foundation of China 60836002 10674130 6052100
公开日期2010-05-24 ; 2010-05-24 ; 2010-10-15
源URL[http://ir.semi.ac.cn/handle/172111/11230]  
专题半导体研究所_半导体超晶格国家重点实验室
通讯作者Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: hzzheng@red.semi.ac.cn
推荐引用方式
GB/T 7714		 Luo J ,Zheng HZ ,Shen C ,et al. Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs, Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs[J]. science china-physics mechanics & astronomy, SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2010, 2010,53, 53(5):779-782, 779-782.
APA Luo J .,Zheng HZ .,Shen C .,Zhang H .,Zhu K .,...&Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: hzzheng@red.semi.ac.cn.(2010).Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs.science china-physics mechanics & astronomy,53(5),779-782.
MLA Luo J ,et al."Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs".science china-physics mechanics & astronomy 53.5(2010):779-782.

入库方式： OAI收割

来源：半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。