Study of GaN epilayers growth on freestanding Si cantilevers
文献类型：期刊论文
| 作者 | Chen J ; Wang X ; Wu AM ; Zhang B ; Wang X ; Wu YX ; Zhu JJ ; Yang H |
| 刊名 | solid-state electronics
 |
| 出版日期 | 2010 |
| 卷号 | 54期号:1页码:4-7 |
| 关键词 | FABRICATION SILICON MEMS NITRIDE |
| 通讯作者 | chen, j, chinese acad sci, state key lab funct mat informat, shanghai inst microsyst & informat technol, 865 changning rd, shanghai 200050, peoples r china. e-mail address: jchen@mail.sim.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | five-micron thick freestanding si cantilevers were fabricated on bulk si (1 1 1) substrates with surface/bulk micromachining (sbm) process. then 1-mu m thick gan layers were deposited on the si cantilevers by metal-organic chemical vapor deposition (mocvd). epilayers on cantilever areas were obtained crack-free, and the photoluminescence (pl) spectra verified the stress reduction and better material quality in these suspended parts of gan. back sides of the cantilevers were also covered with gan layers, which prevented the composite beams from bending dramatically. this paper had proved the feasibility of integrating high-quality gan epilayers with si micromechanical structures to realize gan-based micro electro-mechanical system (mems). (c) 2009 elsevier ltd. all rights reserved.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-04t14:46:28z no. of bitstreams: 1 67.pdf: 311231 bytes, checksum: f132bdab0d9cd6be5235f71fc56d8157 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-04t14:48:07z (gmt) no. of bitstreams: 1 67.pdf: 311231 bytes, checksum: f132bdab0d9cd6be5235f71fc56d8157 (md5); made available in dspace on 2010-04-04t14:48:07z (gmt). no. of bitstreams: 1 67.pdf: 311231 bytes, checksum: f132bdab0d9cd6be5235f71fc56d8157 (md5) previous issue date: 2010; solid-state lighting engineering program of shanghai government 05d211006-3; open item of state key laboratory of functional materials for informatics; 其它 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | solid-state lighting engineering program of shanghai government 05d211006-3; open item of state key laboratory of functional materials for informatics |
| 语种 | 英语 |
| 公开日期 | 2010-04-04 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10201]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Chen J,Wang X,Wu AM,et al. Study of GaN epilayers growth on freestanding Si cantilevers[J]. solid-state electronics,2010,54(1):4-7. |
| APA | Chen J.,Wang X.,Wu AM.,Zhang B.,Wang X.,...&Yang H.(2010).Study of GaN epilayers growth on freestanding Si cantilevers.solid-state electronics,54(1),4-7. |
| MLA | Chen J,et al."Study of GaN epilayers growth on freestanding Si cantilevers".solid-state electronics 54.1(2010):4-7. |
入库方式： OAI收割
来源：半导体研究所
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