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Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs

文献类型：期刊论文

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作者Deng HX (Deng Hui-Xiong); Jiang XW (Jiang Xiang-Wei); Tang LM (Tang Li-Ming); Deng, HX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hxdeng@semi.ac.cn
刊名chinese physics letters ; CHINESE PHYSICS LETTERS
出版日期2010 ; 2010
卷号27期号:5页码:art. no. 057101
关键词SIMULATION Simulation Transistors Limit Nm TRANSISTORS LIMIT NM
通讯作者deng, hx, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: hxdeng@semi.ac.cn
合作状况其它
英文摘要using self-consistent calculations of million-atom schrodinger-poisson equations, we investigate the i-v characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors (mosfet) based on a full 3-d quantum mechanical simulation under nonequilibtium condition. atomistic empirical pseudopotentials are used to describe the device hamiltonian and the underlying bulk band structure. we find that the ballistic transport dominates the i-v characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8ma/mu m when the channel length of mosfet scales down to 25 nm. the effects of tunnelling transport lower the threshold voltage v-t. the ballistic current based on fully 3-d quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of luo et al.; Using self-consistent calculations of million-atom Schrodinger-Poisson equations, we investigate the I-V characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors (MOSFET) based on a full 3-D quantum mechanical simulation under nonequilibtium condition. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. We find that the ballistic transport dominates the I-V characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8mA/mu m when the channel length of MOSFET scales down to 25 nm. The effects of tunnelling transport lower the threshold voltage V-t. The ballistic current based on fully 3-D quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of Luo et al.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-24t05:59:06z no. of bitstreams: 1 quantum mechanical study on tunnelling and ballistic transport of nanometer si mosfets.pdf: 536125 bytes, checksum: d158f7542a67a02c324680b4771ba948 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-24t07:16:42z (gmt) no. of bitstreams: 1 quantum mechanical study on tunnelling and ballistic transport of nanometer si mosfets.pdf: 536125 bytes, checksum: d158f7542a67a02c324680b4771ba948 (md5); made available in dspace on 2010-05-24t07:16:42z (gmt). no. of bitstreams: 1 quantum mechanical study on tunnelling and ballistic transport of nanometer si mosfets.pdf: 536125 bytes, checksum: d158f7542a67a02c324680b4771ba948 (md5) previous issue date: 2010; national basic research program of china g2009cb929300 national natural science foundation of china 60521001 60776061; 其它
学科主题半导体物理 ; 半导体物理
收录类别SCI
资助信息national basic research program of china g2009cb929300 national natural science foundation of china 60521001 60776061
语种英语 ; 英语
资助机构National Basic Research Program of China G2009CB929300 National Natural Science Foundation of China 60521001 60776061
公开日期2010-05-24 ; 2010-05-24 ; 2010-10-15
源URL[http://ir.semi.ac.cn/handle/172111/11236]  
专题半导体研究所_半导体超晶格国家重点实验室
通讯作者Deng, HX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hxdeng@semi.ac.cn
推荐引用方式
GB/T 7714		 Deng HX ,Jiang XW ,Tang LM ,et al. Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs, Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs[J]. chinese physics letters, CHINESE PHYSICS LETTERS,2010, 2010,27, 27(5):art. no. 057101, Art. No. 057101.
APA Deng HX ,Jiang XW ,Tang LM ,&Deng, HX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hxdeng@semi.ac.cn.(2010).Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs.chinese physics letters,27(5),art. no. 057101.
MLA Deng HX ,et al."Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs".chinese physics letters 27.5(2010):art. no. 057101.

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来源：半导体研究所

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