Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
文献类型：期刊论文
| 作者 | Wu YX (Wu Yu-Xin) ; Zhu JJ (Zhu Jian-Jun) ; Chen GF (Chen Gui-Feng) ; Zhang SM (Zhang Shu-Ming) ; Jiang DS (Jiang De-Sheng) ; Liu ZS (Liu Zong-Shun) ; Zhao DG (Zhao De-Gang) ; Wang H (Wang Hui) ; Wang YT (Wang Yu-Tian) ; Yang H (Yang Hui) |
| 刊名 | chinese physics b
 |
| 出版日期 | 2010 |
| 卷号 | 19期号:3页码:art. no. 036801 |
| 关键词 | GaN Si (111) substrate metalorganic chemical vapour deposition AlN buffer layer AlGaN interlayer : VAPOR-PHASE EPITAXY CRACK-FREE GAN STRESS-CONTROL SI(111) DEPOSITION ALXGA1-XN FILM |
| 通讯作者 | zhu, jj, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. e-mail address: jjzhu@red.semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | we present the growth of gan epilayer on si (111) substrate with a single algan interlayer sandwiched between the gan epilayer and aln buffer layer by using the metalorganic chemical vapour deposition. the influence of the aln buffer layer thickness on structural properties of the gan epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. it is found that an aln buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of algan interlayer, which can introduce a more compressive strain into the subsequent grown gan layer, and reduce the crack density and threading dislocation density in gan film.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-13t02:03:21z no. of bitstreams: 1 influence of aln buffer layer thickness on structural properties of gan epilayer grown on si (111) substrate with algan interlayer.pdf: 2229197 bytes, checksum: fee5c0946b77e8d4b5eff75c63fc8d3e (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-13t02:04:53z (gmt) no. of bitstreams: 1 influence of aln buffer layer thickness on structural properties of gan epilayer grown on si (111) substrate with algan interlayer.pdf: 2229197 bytes, checksum: fee5c0946b77e8d4b5eff75c63fc8d3e (md5); made available in dspace on 2010-04-13t02:04:53z (gmt). no. of bitstreams: 1 influence of aln buffer layer thickness on structural properties of gan epilayer grown on si (111) substrate with algan interlayer.pdf: 2229197 bytes, checksum: fee5c0946b77e8d4b5eff75c63fc8d3e (md5) previous issue date: 2010; national natural science foundation of china 60506001 60476021 60576003 60776047 60836003；national basic research program of china 2007cb936700；project of technological research and development of hebei province, china 07215134; 其它 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60506001 60476021 60576003 60776047 60836003；national basic research program of china 2007cb936700；project of technological research and development of hebei province, china 07215134 |
| 语种 | 英语 |
| 公开日期 | 2010-04-13 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11136]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wu YX ,Zhu JJ ,Chen GF ,et al. Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer[J]. chinese physics b,2010,19(3):art. no. 036801. |
| APA | Wu YX .,Zhu JJ .,Chen GF .,Zhang SM .,Jiang DS .,...&Yang H .(2010).Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer.chinese physics b,19(3),art. no. 036801. |
| MLA | Wu YX ,et al."Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer".chinese physics b 19.3(2010):art. no. 036801. |
入库方式： OAI收割
来源：半导体研究所
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