Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films
文献类型：期刊论文
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| 作者 | Khazen K (Khazen Kh.); von Bardeleben HJ (von Bardeleben H. J.); Cantin JL (Cantin J. L.); Mauger A (Mauger A.); Chen L (Chen L.); Zhao JH (Zhao J. H.); Khazen, K, Univ Paris 06, CNRS, UMR 7588, Inst Nanosci Paris, 140 Rue Lourmel, F-75015 Paris, France. |
| 刊名 | physical review b
 ; PHYSICAL REVIEW B
|
| 出版日期 | 2010 ; 2010 |
| 卷号 | 81期号:23页码:art. no. 235201 |
| 关键词 | AMORPHOUS FERROMAGNET Amorphous Ferromagnet Curie-temperature Critical-behavior Renormalization Group Dipolar Interactions Critical Exponents Magnetic Equation Alloys State Semiconductors CURIE-TEMPERATURE CRITICAL-BEHAVIOR RENORMALIZATION GROUP DIPOLAR INTERACTIONS CRITICAL EXPONENTS MAGNETIC EQUATION ALLOYS STATE SEMICONDUCTORS |
| 通讯作者 | khazen, k, univ paris 06, cnrs, umr 7588, inst nanosci paris, 140 rue lourmel, f-75015 paris, france. |
| 合作状况 | 国际 |
| 英文摘要 | ga1-xmnxas films with exceptionally high saturation magnetizations of approximate to 100 emu/cm(3) corresponding to effective mn concentrations of x(eff)approximate to 0.10 still have a curie temperature t-c smaller than 195 k contradicting mean-field predictions. the analysis of the critical exponent beta of the remnant magnetization-beta = 0.407(5)-in the framework of the models for disordered/amorphous ferromagnets suggests that this limit on t-c is intrinsic and due to the short range of the ferromagnetic interactions resulting from the small mean-free path of the holes. this result questions the perspective of room-temperature ferromagnetism in highly doped gamnas.; Ga1-xMnxAs films with exceptionally high saturation magnetizations of approximate to 100 emu/cm(3) corresponding to effective Mn concentrations of x(eff)approximate to 0.10 still have a Curie temperature T-C smaller than 195 K contradicting mean-field predictions. The analysis of the critical exponent beta of the remnant magnetization-beta = 0.407(5)-in the framework of the models for disordered/amorphous ferromagnets suggests that this limit on T-C is intrinsic and due to the short range of the ferromagnetic interactions resulting from the small mean-free path of the holes. This result questions the perspective of room-temperature ferromagnetism in highly doped GaMnAs.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-18t14:45:55z no. of bitstreams: 1 intrinsically limited critical temperatures of highly doped ga1-xmnxas thin films.pdf: 381049 bytes, checksum: 6708a87185de2521a6718ffcd1d1f1fb (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-06-18t14:46:18z (gmt) no. of bitstreams: 1 intrinsically limited critical temperatures of highly doped ga1-xmnxas thin films.pdf: 381049 bytes, checksum: 6708a87185de2521a6718ffcd1d1f1fb (md5); made available in dspace on 2010-06-18t14:46:18z (gmt). no. of bitstreams: 1 intrinsically limited critical temperatures of highly doped ga1-xmnxas thin films.pdf: 381049 bytes, checksum: 6708a87185de2521a6718ffcd1d1f1fb (md5) previous issue date: 2010; 国际 |
| 学科主题 | 半导体材料 ; 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2010-06-18 ; 2010-06-18 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11332]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Khazen, K, Univ Paris 06, CNRS, UMR 7588, Inst Nanosci Paris, 140 Rue Lourmel, F-75015 Paris, France. |
| 推荐引用方式 GB/T 7714 | Khazen K ,von Bardeleben HJ ,Cantin JL ,et al. Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films, Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films[J]. physical review b, PHYSICAL REVIEW B,2010, 2010,81, 81(23):art. no. 235201, Art. No. 235201. |
| APA | Khazen K .,von Bardeleben HJ .,Cantin JL .,Mauger A .,Chen L .,...&Khazen, K, Univ Paris 06, CNRS, UMR 7588, Inst Nanosci Paris, 140 Rue Lourmel, F-75015 Paris, France..(2010).Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films.physical review b,81(23),art. no. 235201. |
| MLA | Khazen K ,et al."Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films".physical review b 81.23(2010):art. no. 235201. |
入库方式： OAI收割
来源：半导体研究所
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