Tuning photoluminescence of single InAs quantum dot by electric field
文献类型：期刊论文
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| 作者 | Chang XY (Chang Xiu-Ying); Dou XM (Dou Xiu-Ming); Sun BQ (Sun Bao-Quan); Xiong YH (Xiong Yong-Hua); Ni HQ (Ni Hai-Qiao); Niu ZC (Niu Zhi-Chuan); Sun, BQ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. |
| 刊名 | acta physica sinica
 ; ACTA PHYSICA SINICA
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| 出版日期 | 2010 ; 2010 |
| 卷号 | 59期号:6页码:4279-4282 |
| 关键词 | single InAs quantum dot Single Inas Quantum Dot Stark Effect Electron-hole Separation Stark effect electron-hole separation |
| 通讯作者 | sun, bq, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. |
| 合作状况 | 其它 |
| 英文摘要 | by using photoluminescence (pl) and time-resolved pl spectra, the optical properties of single inas quantum dot (qd) embedded in the p-1-n structure have been studied under an applied electric field with the increasing of electric field, the exciton lifetime increases due to the stark effect. we noticed that the decrease or quenching of pl intensity with increasing the electric field is mainly due to the decrease of the carriers captured by qd.; By using photoluminescence (PL) and time-resolved PL spectra, the optical properties of single InAs quantum dot (QD) embedded in the p-1-n structure have been studied under an applied electric field With the increasing of electric field, the exciton lifetime increases due to the Stark effect. We noticed that the decrease or quenching of PL intensity with increasing the electric field is mainly due to the decrease of the carriers captured by QD.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-07-05t07:10:45z no. of bitstreams: 1 tuning photoluminescence of single inas quantum dot by electric field.pdf: 409197 bytes, checksum: b55ef404988cc866becdadd6686749ee (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-07-05t07:42:58z (gmt) no. of bitstreams: 1 tuning photoluminescence of single inas quantum dot by electric field.pdf: 409197 bytes, checksum: b55ef404988cc866becdadd6686749ee (md5); made available in dspace on 2010-07-05t07:42:58z (gmt). no. of bitstreams: 1 tuning photoluminescence of single inas quantum dot by electric field.pdf: 409197 bytes, checksum: b55ef404988cc866becdadd6686749ee (md5) previous issue date: 2010; project supported by the national natural science foundation of china (grant no 60676054); 其它 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | project supported by the national natural science foundation of china (grant no 60676054) |
| 语种 | 中文 ; 中文 |
| 资助机构 | Project supported by the National Natural Science Foundation of China (Grant No 60676054) |
| 公开日期 | 2010-07-05 ; 2010-07-05 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11351]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Sun, BQ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Chang XY ,Dou XM ,Sun BQ ,et al. Tuning photoluminescence of single InAs quantum dot by electric field, Tuning photoluminescence of single InAs quantum dot by electric field[J]. acta physica sinica, ACTA PHYSICA SINICA,2010, 2010,59, 59(6):4279-4282, 4279-4282. |
| APA | Chang XY .,Dou XM .,Sun BQ .,Xiong YH .,Ni HQ .,...&Sun, BQ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China..(2010).Tuning photoluminescence of single InAs quantum dot by electric field.acta physica sinica,59(6),4279-4282. |
| MLA | Chang XY ,et al."Tuning photoluminescence of single InAs quantum dot by electric field".acta physica sinica 59.6(2010):4279-4282. |
入库方式： OAI收割
来源：半导体研究所
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