Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition
文献类型：期刊论文
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| 作者 | Zhu BL (Zhu B. L.); Zhao XZ (Zhao X. Z.); Su FH (Su F. H.); Li GH (Li G. H.); Wu XG (Wu X. G.); Wu J (Wu J.); Wu R (Wu R.); Zhu, BL, Wuhan Univ Sci & Technol, Sch Met & Mat, Dept Met Mat Engn, Wuhan 430081, Peoples R China. E-mail Address: zhubailin97@hotmail.com |
| 刊名 | vacuum
 ; VACUUM
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| 出版日期 | 2010 ; 2010 |
| 卷号 | 84期号:11页码:1280-1286 |
| 关键词 | ZnO Zno Pulsed Laser Deposition (Pld) Annealing Treatment Photoluminescence (Pl) Oxide Thin-films Substrate-temperature Oxygen-pressure Electrical-properties Pld Technique Al Films Emission Pulsed laser deposition (PLD) Annealing treatment Photoluminescence (PL) OXIDE THIN-FILMS SUBSTRATE-TEMPERATURE OXYGEN-PRESSURE ELECTRICAL-PROPERTIES PLD TECHNIQUE AL FILMS EMISSION |
| 通讯作者 | zhu, bl, wuhan univ sci & technol, sch met & mat, dept met mat engn, wuhan 430081, peoples r china. e-mail address: zhubailin97@hotmail.com |
| 合作状况 | 国内 |
| 英文摘要 | zno thin films were deposited on glass substrates at room temperature (rt) similar to 500 degrees c by pulsed laser deposition (pld) technique and then were annealed at 150-450 degrees c in air. the effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by xrd, sem, transmittance spectra, and photoluminescence (pl). the results showed that the c-axis orientation of zno thin films was not destroyed by annealing treatments: the grain size increased and stress relaxed for the films deposited at 200-500 degrees c, and thin films densified for the films deposited at rt with increasing annealing temperature. the transmittance spectra indicated that e-g of thin films showed a decreased trend with annealing temperature. from the pl measurements, there was a general trend, that is uv emission enhanced with lower annealing temperature and disappeared at higher annealing temperature for the films deposited at 200-500 degrees c; no uv emission was observed for the films deposited at rt regardless of annealing treatment. improvement of grain size and stoichiometric ratio with annealing temperature can be attributed to the enhancement of uv emission, but the adsorbed oxygen species on the surface and grain boundary of films are thought to contribute the annihilation of uv emission. it seems that annealing at lower temperature in air is an effective method to improve the uv emission for thin films deposited on glass substrate at substrate temperature above rt.; ZnO thin films were deposited on glass substrates at room temperature (RT) similar to 500 degrees C by pulsed laser deposition (PLD) technique and then were annealed at 150-450 degrees C in air. The effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by XRD, SEM, transmittance spectra, and photoluminescence (PL). The results showed that the c-axis orientation of ZnO thin films was not destroyed by annealing treatments: the grain size increased and stress relaxed for the films deposited at 200-500 degrees C, and thin films densified for the films deposited at RT with increasing annealing temperature. The transmittance spectra indicated that E-g of thin films showed a decreased trend with annealing temperature. From the PL measurements, there was a general trend, that is UV emission enhanced with lower annealing temperature and disappeared at higher annealing temperature for the films deposited at 200-500 degrees C; no UV emission was observed for the films deposited at RT regardless of annealing treatment. Improvement of grain size and stoichiometric ratio with annealing temperature can be attributed to the enhancement of UV emission, but the adsorbed oxygen species on the surface and grain boundary of films are thought to contribute the annihilation of UV emission. It seems that annealing at lower temperature in air is an effective method to improve the UV emission for thin films deposited on glass substrate at substrate temperature above RT.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-07-05t07:42:43z no. of bitstreams: 1 low temperature annealing effects on the structure and optical properties of zno films grown by pulsed laser deposition.pdf: 973285 bytes, checksum: 2c42d3145374fb14659dda93cf5c0d7a (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-07-05t07:47:15z (gmt) no. of bitstreams: 1 low temperature annealing effects on the structure and optical properties of zno films grown by pulsed laser deposition.pdf: 973285 bytes, checksum: 2c42d3145374fb14659dda93cf5c0d7a (md5); made available in dspace on 2010-07-05t07:47:15z (gmt). no. of bitstreams: 1 low temperature annealing effects on the structure and optical properties of zno films grown by pulsed laser deposition.pdf: 973285 bytes, checksum: 2c42d3145374fb14659dda93cf5c0d7a (md5) previous issue date: 2010; the authors highly thank q. fu for his help in observing the surface morphology of the films by sem. the authors wish to acknowledge the financial support provided by china postdoctoral science foundation.; 国内 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 资助信息 | the authors highly thank q. fu for his help in observing the surface morphology of the films by sem. the authors wish to acknowledge the financial support provided by china postdoctoral science foundation. |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 资助机构 | The authors highly thank Q. Fu for his help in observing the surface morphology of the films by SEM. The authors wish to acknowledge the financial support provided by China Postdoctoral Science Foundation. |
| 公开日期 | 2010-07-05 ; 2010-07-05 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11358]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Zhu, BL, Wuhan Univ Sci & Technol, Sch Met & Mat, Dept Met Mat Engn, Wuhan 430081, Peoples R China. E-mail Address: zhubailin97@hotmail.com |
| 推荐引用方式 GB/T 7714 | Zhu BL ,Zhao XZ ,Su FH ,et al. Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition, Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition[J]. vacuum, VACUUM,2010, 2010,84, 84(11):1280-1286, 1280-1286. |
| APA | Zhu BL .,Zhao XZ .,Su FH .,Li GH .,Wu XG .,...&Zhu, BL, Wuhan Univ Sci & Technol, Sch Met & Mat, Dept Met Mat Engn, Wuhan 430081, Peoples R China. E-mail Address: zhubailin97@hotmail.com.(2010).Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition.vacuum,84(11),1280-1286. |
| MLA | Zhu BL ,et al."Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition".vacuum 84.11(2010):1280-1286. |
入库方式： OAI收割
来源：半导体研究所
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