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Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE)

文献类型：会议论文

作者Lu Y. M. ; Wu C. X. ; Wei Z. P. ; Zhang Z. Z. ; Zhao D. X. ; Zhang J. Y. ; Liu Y. C. ; Shen D. Z. ; Fan X. W.
出版日期2005
会议名称13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
会议地点13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
关键词In this paper Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT) Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers respectively. In PL spectra two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.
页码299-304
收录类别EI
源URL[http://ir.ciomp.ac.cn/handle/181722/33244]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式
GB/T 7714		 Lu Y. M.,Wu C. X.,Wei Z. P.,et al. Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE)[C]. 见:13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004. 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004.

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来源：长春光学精密机械与物理研究所

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