Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure (EI CONFERENCE)
文献类型：会议论文
| 作者 | Zhang J.; Zhang J.; Zhang J.; Li B.; Li B.; Li B. |
| 出版日期 | 2006 |
| 关键词 | MgZnO/ZnO heterostructure was fabricated on sapphire substrate by plasma assistant molecular beam epitaxy. The micro-photoluminescence spectra of sample are reported which shows that different emission peaks would appear when the laser beam focuses different deepness in the film. A carrier tunneling process from the MgZnO capping layer to ZnO layer was observed by the measured temperature dependence of photoluminescence spectra. This induces the emission intensity of the ZnO grew monotonically from 81 to 103 K. 2006 Elsevier B.V. All rights reserved. |
| 页码 | 304-308 |
| 收录类别 | EI |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/33252]  |
| 专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文 |
| 推荐引用方式 GB/T 7714 | Zhang J.,Zhang J.,Zhang J.,et al. Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure (EI CONFERENCE)[C]. 见:. |
入库方式： OAI收割
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