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Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE)

文献类型：会议论文

作者Liang H. W. ; Lu Y. M. ; Shen D. Z. ; Yan J. F. ; Li B. H. ; Zhang J. Y. ; Liu Y. C. ; Fan X. W.
出版日期2005
会议名称13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
会议地点13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
关键词High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that below 500 C ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.
页码305-310
收录类别EI
源URL[http://ir.ciomp.ac.cn/handle/181722/33253]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式
GB/T 7714		 Liang H. W.,Lu Y. M.,Shen D. Z.,et al. Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE)[C]. 见:13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004. 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004.

入库方式： OAI收割

来源：长春光学精密机械与物理研究所

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