中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 半导体研究所
  3. 中国科学院半导体研究所
  4. 半导体超晶格国家重点实验室
Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection

文献类型：期刊论文

;
作者Wang GW (Wang Guo-Wei); Xu YQ (Xu Ying-Qiang); Guo J (Guo Jie); Tang B (Tang Bao); Ren ZW (Ren Zheng-Wei); He ZH (He Zhen-Hong); Niu ZC (Niu Zhi-Chuan); Wang, GW, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: wangguowei@semi.ac.cn
刊名chinese physics letters ; CHINESE PHYSICS LETTERS
出版日期2010 ; 2010
卷号27期号:7页码:art. no. 077305
关键词IR DETECTION MODULES Ir Detection Modules Inas INAS
通讯作者wang, gw, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: wangguowei@semi.ac.cn
合作状况国内
英文摘要inas/gasb superlattice (sl) midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on gasb(001) residual p-type substrates. a thick gasb layer is grown under the optimized growth condition as a buffer layer. the detectors containing a 320-period 8ml/8ml inas/gasb sl active layer are fabricated with a series pixel area using anode sulfide passivation. corresponding to 50% cutoff wavelengths of 5.0 mu m at 77 k, the peak directivity of the detectors is 1.6 x 10(10) cm.hz(1/2) w-1 at 77 k.; InAs/GaSb superlattice (SL) midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on GaSb(001) residual p-type substrates. A thick GaSb layer is grown under the optimized growth condition as a buffer layer. The detectors containing a 320-period 8ML/8ML InAs/GaSb SL active layer are fabricated with a series pixel area using anode sulfide passivation. Corresponding to 50% cutoff wavelengths of 5.0 mu m at 77 K, the peak directivity of the detectors is 1.6 x 10(10) cm.Hz(1/2) W-1 at 77 K.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17t01:06:33z no. of bitstreams: 1 growth and characterization of gasb-based type-ii inas-gasb superlattice photodiodes for mid-infrared detection.pdf: 853722 bytes, checksum: bccab499133fc4e20a423dbe03bc0a55 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17t01:07:27z (gmt) no. of bitstreams: 1 growth and characterization of gasb-based type-ii inas-gasb superlattice photodiodes for mid-infrared detection.pdf: 853722 bytes, checksum: bccab499133fc4e20a423dbe03bc0a55 (md5); made available in dspace on 2010-08-17t01:07:27z (gmt). no. of bitstreams: 1 growth and characterization of gasb-based type-ii inas-gasb superlattice photodiodes for mid-infrared detection.pdf: 853722 bytes, checksum: bccab499133fc4e20a423dbe03bc0a55 (md5) previous issue date: 2010; supported by the national natural science foundation of china under grant no 60625405, and the national basic research program of china under grant nos 2007cb936304 and 2010cb327601.; 国内
学科主题半导体物理 ; 半导体物理
收录类别SCI
资助信息supported by the national natural science foundation of china under grant no 60625405, and the national basic research program of china under grant nos 2007cb936304 and 2010cb327601.
语种英语 ; 英语
资助机构Supported by the National Natural Science Foundation of China under Grant No 60625405, and the National Basic Research Program of China under Grant Nos 2007CB936304 and 2010CB327601.
公开日期2010-08-17 ; 2010-08-17 ; 2010-10-15
源URL[http://ir.semi.ac.cn/handle/172111/13477]  
专题半导体研究所_半导体超晶格国家重点实验室
通讯作者Wang, GW, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: wangguowei@semi.ac.cn
推荐引用方式
GB/T 7714		 Wang GW ,Xu YQ ,Guo J ,et al. Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection, Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection[J]. chinese physics letters, CHINESE PHYSICS LETTERS,2010, 2010,27, 27(7):art. no. 077305, Art. No. 077305.
APA Wang GW .,Xu YQ .,Guo J .,Tang B .,Ren ZW .,...&Wang, GW, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: wangguowei@semi.ac.cn.(2010).Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection.chinese physics letters,27(7),art. no. 077305.
MLA Wang GW ,et al."Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection".chinese physics letters 27.7(2010):art. no. 077305.

入库方式： OAI收割

来源：半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。