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The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots

文献类型：期刊论文

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作者Huang X (Huang X.); Zhang XH (Zhang X. H.); Zhu YG (Zhu Y. G.); Li T (Li T.); Han LF (Han L. F.); Shang XJ (Shang X. J.); Ni HQ (Ni H. Q.); Niu ZC (Niu Z. C.); Zhang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xinhuiz@semi.ac.cn
刊名journal of optics ; JOURNAL OF OPTICS
出版日期2010 ; 2010
卷号12期号:5页码:art. no. 055203
关键词InAs quantum dots Inas Quantum Dots Nonlinear Refraction Reflection Z-scan Dc Electric Field Effect Electrooptic Properties Saturable Absorber Optical-properties Well Structures Single-beam Band-gap Electroabsorption Absorption Reflection Dependence nonlinear refraction reflection Z-scan dc electric field effect ELECTROOPTIC PROPERTIES SATURABLE ABSORBER OPTICAL-PROPERTIES WELL STRUCTURES SINGLE-BEAM BAND-GAP ELECTROABSORPTION ABSORPTION REFLECTION DEPENDENCE
通讯作者zhang, xh, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: xinhuiz@semi.ac.cn
合作状况其它
英文摘要the refractive nonlinearities of inas/gaas quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection z-scan technique. the effect of the dc electric field on the nonlinear response of inas/gaas quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. this implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. our experimental results show the potential for voltage tunability in inas quantum dot-based nonlinear electro-optic devices.; The refractive nonlinearities of InAs/GaAs quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection Z-scan technique. The effect of the dc electric field on the nonlinear response of InAs/GaAs quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. This implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. Our experimental results show the potential for voltage tunability in InAs quantum dot-based nonlinear electro-optic devices.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17t01:12:37z no. of bitstreams: 1 the effect of an electric field on the nonlinear response of inas-gaas quantum dots.pdf: 305285 bytes, checksum: a20c52fe0f1d96c23c4dd83421e6b204 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17t01:29:06z (gmt) no. of bitstreams: 1 the effect of an electric field on the nonlinear response of inas-gaas quantum dots.pdf: 305285 bytes, checksum: a20c52fe0f1d96c23c4dd83421e6b204 (md5); made available in dspace on 2010-08-17t01:29:07z (gmt). no. of bitstreams: 1 the effect of an electric field on the nonlinear response of inas-gaas quantum dots.pdf: 305285 bytes, checksum: a20c52fe0f1d96c23c4dd83421e6b204 (md5) previous issue date: 2010; this work was supported by the national natural science foundation of china (nos 10674131, 60625405 and 10734060).; 其它
学科主题半导体物理 ; 半导体物理
资助信息this work was supported by the national natural science foundation of china (nos 10674131, 60625405 and 10734060).
收录类别SCI
语种英语 ; 英语
资助机构This work was supported by the National Natural Science Foundation of China (Nos 10674131, 60625405 and 10734060).
公开日期2010-08-17 ; 2010-08-17 ; 2010-10-15
源URL[http://ir.semi.ac.cn/handle/172111/13478]  
专题半导体研究所_半导体超晶格国家重点实验室
通讯作者Zhang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xinhuiz@semi.ac.cn
推荐引用方式
GB/T 7714		 Huang X ,Zhang XH ,Zhu YG ,et al. The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots, The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots[J]. journal of optics, JOURNAL OF OPTICS,2010, 2010,12, 12(5):art. no. 055203, Art. No. 055203.
APA Huang X .,Zhang XH .,Zhu YG .,Li T .,Han LF .,...&Zhang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xinhuiz@semi.ac.cn.(2010).The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots.journal of optics,12(5),art. no. 055203.
MLA Huang X ,et al."The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots".journal of optics 12.5(2010):art. no. 055203.

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来源：半导体研究所

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