Ferromagnetic modification of GaN film by Cu+ ions implantation
文献类型：期刊论文
| 作者 | Zhao DG
|
| 刊名 | nuclear instruments & methods in physics research section b-beam interactions with materials and atoms
 |
| 出版日期 | 2010 |
| 卷号 | 268期号:2页码:123-126 |
| 关键词 | Nonmagnetic element doped semiconductor Cu ion implantation GaN-based DMS PIXE ANALYSIS DOPED ZNO MN CR |
| 通讯作者 | zhang, b, fudan univ, inst modern phys, appl ion beam phys lab, shanghai 200433, peoples r china. e-mail address: binzhang@fudan.edu.cn |
| 合作状况 | 国内 |
| 英文摘要 | the structural and magnetic properties of cu+ ions-implanted gan films have been reported. eighty kilo-electron-volt cu+ ions were implanted into n-type gan film at room temperature with fluences ranging from 1 x 10(16) to 8 x 10(16) cm(-2) and subsequently annealed at 800 degrees c for 1 h in n-2 ambient. pixe was employed to determine the cu-implanted content. the magnetic property was measured by the quantum design mpms squid magnetometer. no secondary phases or clusters were detected within the sensitivity of xrd. raman spectrum measurement showed that the cu ions incorporated into the crystal lattice positions of gan through substitution of ga atoms. apparent ferromagnetic hysteresis loops measured at 10 k were presented. the experimental result showed that the ferromagnetic signal strongly increased with cu-implanted fluence from 1 x 10(16) to 8 x 10(16) cm(-2).; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22t13:11:02z no. of bitstreams: 1 ferromagnetic modification of gan film by cu+ ions implantation.pdf: 690154 bytes, checksum: 2e77174e4eae88f6078676f023d543c4 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-22t13:38:26z (gmt) no. of bitstreams: 1 ferromagnetic modification of gan film by cu+ ions implantation.pdf: 690154 bytes, checksum: 2e77174e4eae88f6078676f023d543c4 (md5); made available in dspace on 2010-04-22t13:38:26z (gmt). no. of bitstreams: 1 ferromagnetic modification of gan film by cu+ ions implantation.pdf: 690154 bytes, checksum: 2e77174e4eae88f6078676f023d543c4 (md5) previous issue date: 2010; national natural science foundation of china 10775033； fund of fudan university； shanghai leading academic discipline project b107; 国内 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 10775033； fund of fudan university； shanghai leading academic discipline project b107 |
| 语种 | 英语 |
| 公开日期 | 2010-04-22 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11178]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhao DG. Ferromagnetic modification of GaN film by Cu+ ions implantation[J]. nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,2010,268(2):123-126. |
| APA | Zhao DG.(2010).Ferromagnetic modification of GaN film by Cu+ ions implantation.nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,268(2),123-126. |
| MLA | Zhao DG."Ferromagnetic modification of GaN film by Cu+ ions implantation".nuclear instruments & methods in physics research section b-beam interactions with materials and atoms 268.2(2010):123-126. |
入库方式： OAI收割
来源：半导体研究所
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