Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Lu GJ (Lu Guo-Jun) ; Zhu JJ (Zhu Jian-Jun) ; Jiang DS (Jiang De-Sheng) ; Wang YT (Wang Yu-Tian) ; Zhao DG (Zhao De-Gang) ; Liu ZS (Liu Zong-Shun) ; Zhang SM (Zhang Shu-Ming) ; Yang H (Yang Hui) |
| 刊名 | chinese physics b
 |
| 出版日期 | 2010 |
| 卷号 | 19期号:2页码:art. no. 026804 |
| 关键词 | metalorganic chemical vapor deposition Al1-xInxN gradual variation in composition optical reflectance spectra X-RAY-DIFFRACTION PHASE EPITAXY RELAXATION FILMS HETEROSTRUCTURES SEPARATION DYNAMICS ALLOYS REGION LAYERS |
| 通讯作者 | zhu, jj, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. e-mail address: jjzhu@red.semi.ac.cn |
| 合作状况 | 国内 |
| 英文摘要 | this paper reports that al1-xinxn epilayers were grown on gan template by metalorganic chemical vapor deposition with an in content of 7%-20%. x-ray diffraction results indicate that all these al1-xinxn epilayers have a relatively low density of threading dislocations. rutherford backscattering/channeling measurements provide the exact compositional information and show that a gradual variation in composition of the al1-xinxn epilayer happens along the growth direction. the experimental results of optical reflection clearly show the bandgap energies of al1-xinxn epilayers. a bowing parameter of 6.5 ev is obtained from the compositional dependence of the energy gap. the cathodoluminescence peak energy of the al1-xinxn epilayer is much lower than its bandgap, indicating a relatively large stokes shift in the al1-xinxn sample.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22t13:19:33z no. of bitstreams: 1 structural and optical properties of al1-xinxn epilayers on gan template grown by metalorganic chemical vapor deposition.pdf: 1489770 bytes, checksum: 6862fc33ed45faa049eff6675c001d09 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-22t13:38:45z (gmt) no. of bitstreams: 1 structural and optical properties of al1-xinxn epilayers on gan template grown by metalorganic chemical vapor deposition.pdf: 1489770 bytes, checksum: 6862fc33ed45faa049eff6675c001d09 (md5); made available in dspace on 2010-04-22t13:38:45z (gmt). no. of bitstreams: 1 structural and optical properties of al1-xinxn epilayers on gan template grown by metalorganic chemical vapor deposition.pdf: 1489770 bytes, checksum: 6862fc33ed45faa049eff6675c001d09 (md5) previous issue date: 2010; national natural science foundation of china 60776047 60506001 60476021 60576003 60836003; 国内 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60776047 60506001 60476021 60576003 60836003 |
| 语种 | 英语 |
| 公开日期 | 2010-04-22 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11180]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Lu GJ ,Zhu JJ ,Jiang DS ,et al. Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition[J]. chinese physics b,2010,19(2):art. no. 026804. |
| APA | Lu GJ .,Zhu JJ .,Jiang DS .,Wang YT .,Zhao DG .,...&Yang H .(2010).Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition.chinese physics b,19(2),art. no. 026804. |
| MLA | Lu GJ ,et al."Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition".chinese physics b 19.2(2010):art. no. 026804. |
入库方式： OAI收割
来源：半导体研究所
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