Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)
文献类型：期刊论文
| 作者 | Wang H (Wang Hui) ; Liang H (Liang Hu) ; Wang Y (Wang Yong) ; Ng KW (Ng Kar-Wei) ; Deng DM (Deng Dong-Mei) ; Lau KM (Lau Kei-May) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2010 |
| 卷号 | 27期号:3页码:art. no. 038103 |
| 关键词 | VAPOR-PHASE EPITAXY TEMPERATURE ALN INTERLAYERS CRACK-FREE GAN STRESS-CONTROL SI(111) DEPOSITION REDUCTION THICKNESS NITRIDE LAYERS |
| 通讯作者 | wang, h, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china.e-mail address: wangh@semi.ac.cn |
| 合作状况 | 国际 |
| 英文摘要 | we report the growth of high quality and crack-free gan film on si (111) substrate using al0.2ga0.8n/aln stacked interlayers. compared with the previously used single aln interlayer, the algan/aln stacked interlayers can more effectively reduce the tensile stress inside the gan layer. the cross-sectional tem image reveals the bending and annihilation of threading dislocations (tds) in the overgrown gan film which leads to a decrease of td density.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22t13:54:57z no. of bitstreams: 1 effects of alganaln stacked interlayers on gan growth on si (111).pdf: 435104 bytes, checksum: 2079af0298c19f45e59a649c9a97d0a1 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-22t14:12:11z (gmt) no. of bitstreams: 1 effects of alganaln stacked interlayers on gan growth on si (111).pdf: 435104 bytes, checksum: 2079af0298c19f45e59a649c9a97d0a1 (md5); made available in dspace on 2010-04-22t14:12:11z (gmt). no. of bitstreams: 1 effects of alganaln stacked interlayers on gan growth on si (111).pdf: 435104 bytes, checksum: 2079af0298c19f45e59a649c9a97d0a1 (md5) previous issue date: 2010; 国际 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-22 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11188]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang H ,Liang H ,Wang Y ,et al. Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)[J]. chinese physics letters,2010,27(3):art. no. 038103. |
| APA | Wang H ,Liang H ,Wang Y ,Ng KW ,Deng DM ,&Lau KM .(2010).Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111).chinese physics letters,27(3),art. no. 038103. |
| MLA | Wang H ,et al."Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)".chinese physics letters 27.3(2010):art. no. 038103. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。