Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning
文献类型：期刊论文
| ; | |
| 作者 | Wang KY (Wang K. Y.); Edmonds KW (Edmonds K. W.); Irvine AC (Irvine A. C.); Wunderlich J (Wunderlich J.); Olejnik K (Olejnik K.); Rushforth AW (Rushforth A. W.); Campion RP (Campion R. P.); Williams DA (Williams D. A.); Foxon CT (Foxon C. T.); Gallagher BL (Gallagher B. L.) |
| 刊名 | journal of magnetism and magnetic materials
 ; JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
|
| 出版日期 | 2010 ; 2010 |
| 卷号 | 322期号:21页码:3481-3484 |
| 关键词 | Domain wall resistance Domain Wall Resistance Pinning Dependence Pinning Dependence |
| 合作状况 | 国际 |
| 英文摘要 | we have investigated the domain wall resistance for two types of domain walls in a (ga,mn)as hall bar with perpendicular magnetization. a sizeable positive intrinsic dwr is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. however, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. this indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.; We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-07t12:54:29z no. of bitstreams: 1 domain wall resistance in perpendicular (ga,mn) as dependence on pinning.pdf: 305989 bytes, checksum: 50a02f8a13016815301735b2c51add76 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-07t13:10:59z (gmt) no. of bitstreams: 1 domain wall resistance in perpendicular (ga,mn) as dependence on pinning.pdf: 305989 bytes, checksum: 50a02f8a13016815301735b2c51add76 (md5); made available in dspace on 2010-09-07t13:10:59z (gmt). no. of bitstreams: 1 domain wall resistance in perpendicular (ga,mn) as dependence on pinning.pdf: 305989 bytes, checksum: 50a02f8a13016815301735b2c51add76 (md5) previous issue date: 2010; 国际 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2010-09-07 ; 2010-09-07 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13522]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang KY ,Edmonds KW ,Irvine AC ,et al. Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning, Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning[J]. journal of magnetism and magnetic materials, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,2010, 2010,322, 322(21):3481-3484, 3481-3484. |
| APA | Wang KY .,Edmonds KW .,Irvine AC .,Wunderlich J .,Olejnik K .,...&Gallagher BL .(2010).Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning.journal of magnetism and magnetic materials,322(21),3481-3484. |
| MLA | Wang KY ,et al."Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning".journal of magnetism and magnetic materials 322.21(2010):3481-3484. |
入库方式： OAI收割
来源：半导体研究所
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