InGaAs nanoflowers grown by MOCVD (EI CONFERENCE)
文献类型：会议论文
| 作者 | Zhang T.
|
| 出版日期 | 2012 |
| 会议名称 | 2012 Spring International Conference on Material Sciences and Technology, MST-S, May 27, 2012 - May 30, 2012 |
| 会议地点 | Xi'an, China |
| 关键词 | InGaAs nanoflowers have been prepared on InP substrates by MOCVD using TMIn TMGa and AsH3 as reactive precursors at 420 C. Through observation by scanning electron microscopy we find that InGaAs nanoflowers are composed with blades and rods. The flower patterns are controlled by the growth temperature. The nanoflowers of InGaAs are disappeared when we alter the growth temperature up and down. The InGaAs nanoflowers are In0.98Ga0.02As. (2012) Trans Tech Publications Switzerland. |
| 页码 | 747-750 |
| 收录类别 | EI |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/33526]  |
| 专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文 |
| 推荐引用方式 GB/T 7714 | Zhang T.. InGaAs nanoflowers grown by MOCVD (EI CONFERENCE)[C]. 见:2012 Spring International Conference on Material Sciences and Technology, MST-S, May 27, 2012 - May 30, 2012. Xi'an, China. |
入库方式： OAI收割
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