ZnO thin film grown on glass by metal-organic chemical vapor deposition (EI CONFERENCE)
文献类型：会议论文
| 作者 | Wang C.
|
| 出版日期 | 2008 |
| 会议名称 | 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, March 24, 2008 - March 27, 2008 |
| 会议地点 | Shanghai, China |
| 关键词 | ZnO thin film was deposited on the substrate of Corning glass by metal-organic chemical vapor deposition (MOCVD)[1 2 3] with a buffer layer of SiNx grown by plasma enhanced chemical vapor deposition. The quality of ZnO film was studied by X-ray diffraction and photoluminescence measurement. We found strong diffraction (0 0 2) peak at 34.50 indicating that the ZnO film was strongly C-oriented. The full-width at half maximum of (0 0 2) peak was 0.179. 2008 IEEE. |
| 页码 | 833-835 |
| 收录类别 | EI |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/33551]  |
| 专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文 |
| 推荐引用方式 GB/T 7714 | Wang C.. ZnO thin film grown on glass by metal-organic chemical vapor deposition (EI CONFERENCE)[C]. 见:2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, March 24, 2008 - March 27, 2008. Shanghai, China. |
入库方式： OAI收割
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