中国科学院机构知识库网格系统: Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE)

中国科学院机构知识库网格

Chinese Academy of Sciences Institutional Repositories Grid

Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE)

文献类型：会议论文


作者	Jiao S. J. ; Lu Y. M. ; Shen D. Z. ; Zhang Z. Z. ; Li B. H. ; Zhang J. Y. ; Yao B. ; Liu Y. C. ; Fan X. W.
出版日期	2006
会议名称	12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005
会议地点	Warsaw, Poland
关键词	ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.
页码	972-975
收录类别	EI
源URL	[http://ir.ciomp.ac.cn/handle/181722/33587]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Jiao S. J.,Lu Y. M.,Shen D. Z.,et al. Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE)[C]. 见:12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005. Warsaw, Poland.

入库方式： OAI收割

来源：长春光学精密机械与物理研究所

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