Quantum tunneling through planar p-n junctions in HgTe quantum wells
文献类型：期刊论文
| ; | |
| 作者 | Zhang LB (Zhang L. B.); Chang K (Chang Kai); Xie XC (Xie X. C.); Buhmann H (Buhmann H.); Molenkamp LW (Molenkamp L. W.) |
| 刊名 | new journal of physics
 ; NEW JOURNAL OF PHYSICS
|
| 出版日期 | 2010 ; 2010 |
| 期号 | 12页码:art. no. 083058 |
| 关键词 | SINGLE DIRAC CONE Single Dirac Cone Topological Insulators Hall Surface State Phase TOPOLOGICAL INSULATORS HALL SURFACE STATE PHASE |
| 合作状况 | 国际 |
| 英文摘要 | we demonstrate that a p-n junction created electrically in hgte quantum wells with inverted band structure exhibits interesting intraband and interband tunneling processes. we find a perfect intraband transmission for electrons injected perpendicularly to the interface of the p-n junction. the opacity and transparency of electrons through the p-n junction can be tuned by changing the incidence angle, the fermi energy and the strength of the rashba spin-orbit interaction (rsoi). the occurrence of a conductance plateau due to the formation of topological edge states in a quasi-one-dimensional (q1d) p-n junction can be switched on and off by tuning the gate voltage. the spin orientation can be substantially rotated when the samples exhibit a moderately strong rsoi.; We demonstrate that a p-n junction created electrically in HgTe quantum wells with inverted band structure exhibits interesting intraband and interband tunneling processes. We find a perfect intraband transmission for electrons injected perpendicularly to the interface of the p-n junction. The opacity and transparency of electrons through the p-n junction can be tuned by changing the incidence angle, the Fermi energy and the strength of the Rashba spin-orbit interaction (RSOI). The occurrence of a conductance plateau due to the formation of topological edge states in a quasi-one-dimensional (Q1D) p-n junction can be switched on and off by tuning the gate voltage. The spin orientation can be substantially rotated when the samples exhibit a moderately strong RSOI.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-20t08:22:14z no. of bitstreams: 1 quantum tunneling through planar p-n junctions in hgte quantum wells.pdf: 1037651 bytes, checksum: f930da254fdc7d89987277862b3ea397 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-20t08:28:24z (gmt) no. of bitstreams: 1 quantum tunneling through planar p-n junctions in hgte quantum wells.pdf: 1037651 bytes, checksum: f930da254fdc7d89987277862b3ea397 (md5); made available in dspace on 2010-09-20t08:28:25z (gmt). no. of bitstreams: 1 quantum tunneling through planar p-n junctions in hgte quantum wells.pdf: 1037651 bytes, checksum: f930da254fdc7d89987277862b3ea397 (md5) previous issue date: 2010; 国际 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2010-09-20 ; 2010-09-20 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13536]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhang LB ,Chang K ,Xie XC ,et al. Quantum tunneling through planar p-n junctions in HgTe quantum wells, Quantum tunneling through planar p-n junctions in HgTe quantum wells[J]. new journal of physics, NEW JOURNAL OF PHYSICS,2010, 2010(12):art. no. 083058, Art. No. 083058. |
| APA | Zhang LB ,Chang K ,Xie XC ,Buhmann H ,&Molenkamp LW .(2010).Quantum tunneling through planar p-n junctions in HgTe quantum wells.new journal of physics(12),art. no. 083058. |
| MLA | Zhang LB ,et al."Quantum tunneling through planar p-n junctions in HgTe quantum wells".new journal of physics .12(2010):art. no. 083058. |
入库方式： OAI收割
来源：半导体研究所
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