中国科学院机构知识库网格系统: High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE)

中国科学院机构知识库网格

Chinese Academy of Sciences Institutional Repositories Grid

High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE)

文献类型：会议论文


作者	Liu Y.; Wang L.-J.; Wang L.-J.; Liu Y.; Liu Y.
出版日期	2005
会议名称	ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005
会议地点	Changchun, China
关键词	Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm the full width at half-maximum is 0.7 nm and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.
收录类别	EI
源URL	[http://ir.ciomp.ac.cn/handle/181722/33603]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Liu Y.,Wang L.-J.,Wang L.-J.,et al. High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE)[C]. 见:ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005. Changchun, China.

入库方式： OAI收割

来源：长春光学精密机械与物理研究所

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