Band-tail shape and transport near the metal-insulator transition in Si-doped
文献类型：期刊论文
| ; | |
| 作者 | Misuraca J (Misuraca Jennifer); Trbovic J (Trbovic Jelena); Lu J (Lu Jun); Zhao JH (Zhao Jianhua); Ohno Y (Ohno Yuzo); Ohno H (Ohno Hideo); Xiong P (Xiong Peng); von Molnar S (von Molnar Stephan) |
| 刊名 | physical review b
 ; PHYSICAL REVIEW B
|
| 出版日期 | 2010 ; 2010 |
| 卷号 | 82期号:12页码:art. no. 125202 |
| 关键词 | PERSISTENT PHOTOCONDUCTIVITY Persistent Photoconductivity Dx Centers Alxga1-xas Gaas Semiconductors DX CENTERS ALXGA1-XAS GAAS SEMICONDUCTORS |
| 合作状况 | 国际 |
| 英文摘要 | in the present work, an infrared light-emitting diode is used to photodope molecular-beam-epitaxy-grown si: al0.3ga0.7as, a well-known persistent photoconductor, to vary the effective electron concentration of samples in situ. using this technique, we examine the transport properties of two samples containing different nominal doping concentrations of si [1 x 10(19) cm(-3) for sample 1 (s1) and 9 x 10(17) cm(-3) for sample 2 (s2)] and vary the effective electron density between 10(14) and 10(18) cm(-3). the metal-insulator transition for s1 is found to occur at a critical carrier concentration of 5.7 x 10(16) cm(-3) at 350 mk. the mobilities in both samples are found to be limited by ionized impurity scattering in the temperature range probed, and are adequately described by the brooks-herring screening theory for higher carrier densities. the shape of the band tail of the density of states in al0.3ga0.7as is found electrically through transport measurements. it is determined to have a power-law dependence, with an exponent of -1.25 for s1 and -1.38 for s2.; In the present work, an infrared light-emitting diode is used to photodope molecular-beam-epitaxy-grown Si: Al0.3Ga0.7As, a well-known persistent photoconductor, to vary the effective electron concentration of samples in situ. Using this technique, we examine the transport properties of two samples containing different nominal doping concentrations of Si [1 x 10(19) cm(-3) for sample 1 (S1) and 9 x 10(17) cm(-3) for sample 2 (S2)] and vary the effective electron density between 10(14) and 10(18) cm(-3). The metal-insulator transition for S1 is found to occur at a critical carrier concentration of 5.7 x 10(16) cm(-3) at 350 mK. The mobilities in both samples are found to be limited by ionized impurity scattering in the temperature range probed, and are adequately described by the Brooks-Herring screening theory for higher carrier densities. The shape of the band tail of the density of states in Al0.3Ga0.7As is found electrically through transport measurements. It is determined to have a power-law dependence, with an exponent of -1.25 for S1 and -1.38 for S2.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-20t08:27:42z no. of bitstreams: 1 band-tail shape and transport near the metal-insulator transition in si-doped al0.3ga0.7as.pdf: 320607 bytes, checksum: 42e781f2c53e6e0df562ca69a5f3ee56 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-10-11t02:27:27z (gmt) no. of bitstreams: 1 band-tail shape and transport near the metal-insulator transition in si-doped al0.3ga0.7as.pdf: 320607 bytes, checksum: 42e781f2c53e6e0df562ca69a5f3ee56 (md5); made available in dspace on 2010-10-11t02:27:27z (gmt). no. of bitstreams: 1 band-tail shape and transport near the metal-insulator transition in si-doped al0.3ga0.7as.pdf: 320607 bytes, checksum: 42e781f2c53e6e0df562ca69a5f3ee56 (md5) previous issue date: 2010; 国际 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2010-10-11 ; 2010-10-11 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13538]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Misuraca J ,Trbovic J ,Lu J ,et al. Band-tail shape and transport near the metal-insulator transition in Si-doped, Band-tail shape and transport near the metal-insulator transition in Si-doped[J]. physical review b, PHYSICAL REVIEW B,2010, 2010,82, 82(12):art. no. 125202, Art. No. 125202. |
| APA | Misuraca J .,Trbovic J .,Lu J .,Zhao JH .,Ohno Y .,...&von Molnar S .(2010).Band-tail shape and transport near the metal-insulator transition in Si-doped.physical review b,82(12),art. no. 125202. |
| MLA | Misuraca J ,et al."Band-tail shape and transport near the metal-insulator transition in Si-doped".physical review b 82.12(2010):art. no. 125202. |
入库方式： OAI收割
来源：半导体研究所
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