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Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE)

文献类型：会议论文

作者Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Qin L.
出版日期2005
会议名称ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005
会议地点Changchun, China
关键词By using bottom-emitting structure we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron heavy and light holes. According to the transition selection rule we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells we calculated the gain of VECSEL using transition matrix elements of electron heavy and light holes. We give out the threshold gain output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.
收录类别EI
源URL[http://ir.ciomp.ac.cn/handle/181722/33618]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式
GB/T 7714		 Wang L.-J.,Wang L.-J.,Ning Y.-Q.,et al. Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE)[C]. 见:ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005. Changchun, China.

入库方式： OAI收割

来源：长春光学精密机械与物理研究所

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