Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies
文献类型：期刊论文
| ; | |
| 作者 | Zhang LX (Zhang Lixin); Zhou XF (Zhou Xiang-Feng); Wang HT (Wang Hui-Tian); Xu JJ (Xu Jing-Jun); Li JB (Li Jingbo); Wang EG (Wang E. G.); Wei SH (Wei Su-Huai); Zhang, LX, Nankai Univ, Sch Phys, Tianjin 300071, Peoples R China. |
| 刊名 | physical review b
 ; PHYSICAL REVIEW B
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| 出版日期 | 2010 ; 2010 |
| 卷号 | 82期号:12页码:art. no. 125412 |
| 关键词 | INITIO MOLECULAR-DYNAMICS Initio Molecular-dynamics Electron Gases Heterostructures Transition ELECTRON GASES HETEROSTRUCTURES TRANSITION |
| 通讯作者 | zhang, lx, nankai univ, sch phys, tianjin 300071, peoples r china. |
| 合作状况 | 国际 |
| 英文摘要 | it is revealed from first-principles calculations that polarization-induced asymmetric distribution of oxygen vacancies plays an important role in the insulating behavior at p-type laalo3/srtio3 interface. the formation energy of the oxygen vacancy (v-o) is much smaller than that at the surface of the laalo3 overlayer, causing all the carriers to be compensated by the spontaneously formed v-o's at the interface. in contrast, at an n-type interface, the formation energy of v-o is much higher than that at the surface, and the v-o's formed at the surface enhance the carrier density at the interface. this explains the puzzling behavior of why the p-type interface is always insulating but the n-type interface can be conducting.; It is revealed from first-principles calculations that polarization-induced asymmetric distribution of oxygen vacancies plays an important role in the insulating behavior at p-type LaAlO3/SrTiO3 interface. The formation energy of the oxygen vacancy (V-O) is much smaller than that at the surface of the LaAlO3 overlayer, causing all the carriers to be compensated by the spontaneously formed V-O's at the interface. In contrast, at an n-type interface, the formation energy of V-O is much higher than that at the surface, and the V-O's formed at the surface enhance the carrier density at the interface. This explains the puzzling behavior of why the p-type interface is always insulating but the n-type interface can be conducting.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-10-11t03:09:40z no. of bitstreams: 1 origin of insulating behavior of the p-type laalo3-srtio3 interface.pdf: 341724 bytes, checksum: 20fb88367043c95ac4d683916691e8b1 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-10-11t03:10:54z (gmt) no. of bitstreams: 1 origin of insulating behavior of the p-type laalo3-srtio3 interface.pdf: 341724 bytes, checksum: 20fb88367043c95ac4d683916691e8b1 (md5); made available in dspace on 2010-10-11t03:10:54z (gmt). no. of bitstreams: 1 origin of insulating behavior of the p-type laalo3-srtio3 interface.pdf: 341724 bytes, checksum: 20fb88367043c95ac4d683916691e8b1 (md5) previous issue date: 2010; the work is supported by the start-up grant to lixin zhang from nankai university in p. r. china. the work at nrel is supported by the u.s. doe under contract no. de-ac36-08go28308; 国际 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | the work is supported by the start-up grant to lixin zhang from nankai university in p. r. china. the work at nrel is supported by the u.s. doe under contract no. de-ac36-08go28308 |
| 语种 | 英语 ; 英语 |
| 资助机构 | The work is supported by the start-up grant to Lixin Zhang from Nankai University in P. R. China. The work at NREL is supported by the U.S. DOE under Contract No. DE-AC36-08GO28308 |
| 公开日期 | 2010-10-11 ; 2010-10-11 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13544]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Zhang, LX, Nankai Univ, Sch Phys, Tianjin 300071, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Zhang LX ,Zhou XF ,Wang HT ,et al. Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies, Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies[J]. physical review b, PHYSICAL REVIEW B,2010, 2010,82, 82(12):art. no. 125412, Art. No. 125412. |
| APA | Zhang LX .,Zhou XF .,Wang HT .,Xu JJ .,Li JB .,...&Zhang, LX, Nankai Univ, Sch Phys, Tianjin 300071, Peoples R China..(2010).Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies.physical review b,82(12),art. no. 125412. |
| MLA | Zhang LX ,et al."Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies".physical review b 82.12(2010):art. no. 125412. |
入库方式： OAI收割
来源：半导体研究所
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