Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Wu CM (Wu ChaoMin) ; Shang JZ (Shang JingZhi) ; Zhang BP (Zhang BaoPing) ; Zhang JY (Zhang JiangYong) ; Yu JZ (Yu JinZhong) ; Wang QM (Wang QiMing) |
| 刊名 | science china-technological sciences
 |
| 出版日期 | 2010 |
| 卷号 | 53期号:2页码:313-316 |
| 关键词 | MOCVD DBR high-reflectivity nitride SURFACE-EMITTING LASER |
| 通讯作者 | zhang, bp, xiamen univ, dept phys, xiamen 361005, peoples r china. 电子邮箱地址: bzhang@xmu.edu.cn |
| 合作状况 | 国内 |
| 英文摘要 | we studied the impact of the thickness of gan buffer layer on the properties of distributed bragg reflector (dbr) grown by metalorganic chemical vapor deposition (mocvd). the samples were characterized by using metallographic microscope, transmission electron microscope (tem), atomic force microscopy (afm), x-ray diffractometer (xrd) and spectrophotometer. the results show that the thickness of the gan buffer layer can significantly affect the properties of the dbr structure and there is an optimal thickness of the gan buffer layer. this work would be helpful for the growth of high quality dbr structures.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-04t14:11:10z no. of bitstreams: 1 impact of thickness of gan buffer layer on properties of alngan distributed bragg reflectors grown by metalorganic chemical vapor deposition.pdf: 667812 bytes, checksum: b5bde8478388dfeabc9ab3b468c6fca3 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-04t14:12:23z (gmt) no. of bitstreams: 1 impact of thickness of gan buffer layer on properties of alngan distributed bragg reflectors grown by metalorganic chemical vapor deposition.pdf: 667812 bytes, checksum: b5bde8478388dfeabc9ab3b468c6fca3 (md5); made available in dspace on 2010-05-04t14:12:23z (gmt). no. of bitstreams: 1 impact of thickness of gan buffer layer on properties of alngan distributed bragg reflectors grown by metalorganic chemical vapor deposition.pdf: 667812 bytes, checksum: b5bde8478388dfeabc9ab3b468c6fca3 (md5) previous issue date: 2010; national hi-tech research and development program of china 2006aa03z409; 国内 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national hi-tech research and development program of china 2006aa03z409 |
| 语种 | 英语 |
| 公开日期 | 2010-05-04 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11223]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wu CM ,Shang JZ ,Zhang BP ,et al. Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition[J]. science china-technological sciences,2010,53(2):313-316. |
| APA | Wu CM ,Shang JZ ,Zhang BP ,Zhang JY ,Yu JZ ,&Wang QM .(2010).Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition.science china-technological sciences,53(2),313-316. |
| MLA | Wu CM ,et al."Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition".science china-technological sciences 53.2(2010):313-316. |
入库方式： OAI收割
来源：半导体研究所
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