Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure
文献类型：期刊论文
| 作者 | Ji L (Ji Lian) ; Zhang SM (Zhang Shu-Ming) ; Jiang DS (Jiang De-Sheng) ; Liu ZS (Liu Zong-Shun) ; Zhang LQ (Zhang Li-Qun) ; Zhu JJ (Zhu Jian-Jun) ; Zhao DG (Zhao De-Gang) ; Duan LH (Duan Li-Hong) ; Yang H (Yang Hui) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2010 |
| 卷号 | 27期号:5页码:art. no. 054204 |
| 关键词 | DIODES |
| 通讯作者 | ji, l, chinese acad sci, state key lab integrated optoelect, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jilian@red.semi.ac.cn ; smzhang@red.semi.ac.cn |
| 合作状况 | 国内 |
| 英文摘要 | ingan/gan multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. the laser diode consists of four emitter stripes which share common electrodes on one laser chip. an 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. the threshold current and voltage of the laser array diode are 2a and 10.5 v, respectively. a light output peak power of 12w under pulsed current injection at room temperature is achieved. we simulate the electric properties of gan based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type gan are two effective ways to improve the uniformity of carrier distribution in emitter stripes. two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. the laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. the full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-24t05:50:32z no. of bitstreams: 1 fabrication and characterization of high power ingan blue-violet lasers with an array structure .pdf: 545792 bytes, checksum: b183d70f202ca71a51fb8aa31726f02e (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-24t07:16:26z (gmt) no. of bitstreams: 1 fabrication and characterization of high power ingan blue-violet lasers with an array structure .pdf: 545792 bytes, checksum: b183d70f202ca71a51fb8aa31726f02e (md5); made available in dspace on 2010-05-24t07:16:26z (gmt). no. of bitstreams: 1 fabrication and characterization of high power ingan blue-violet lasers with an array structure .pdf: 545792 bytes, checksum: b183d70f202ca71a51fb8aa31726f02e (md5) previous issue date: 2010; national natural science fund of china 60976045 60506001 60836003 60776047 national basic research program of china 2007cb936700; 国内 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national natural science fund of china 60976045 60506001 60836003 60776047 national basic research program of china 2007cb936700 |
| 语种 | 英语 |
| 公开日期 | 2010-05-24 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11234]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Ji L ,Zhang SM ,Jiang DS ,et al. Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure[J]. chinese physics letters,2010,27(5):art. no. 054204. |
| APA | Ji L .,Zhang SM .,Jiang DS .,Liu ZS .,Zhang LQ .,...&Yang H .(2010).Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure.chinese physics letters,27(5),art. no. 054204. |
| MLA | Ji L ,et al."Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure".chinese physics letters 27.5(2010):art. no. 054204. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。