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Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE)

文献类型：会议论文

作者Zhang J.; Li B.; Li B.; Li B.; Zhao Y.; Zhao Y.; Zhao Y.; Zhang J.; Zhang J.
出版日期2008
会议名称International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007
会议地点Beijing, China
关键词In recent years ZnMgO semiconductor alloys with a direct bandgap tunable between 3.37 eV and 7.8 eV become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m 5 m and 10 m respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns 170 ns and 230 ns for the devices with different finger pitches of 2 m 5 m and 10 m respectively..
收录类别EI
源URL[http://ir.ciomp.ac.cn/handle/181722/33704]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式
GB/T 7714		 Zhang J.,Li B.,Li B.,et al. Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE)[C]. 见:International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007. Beijing, China.

入库方式： OAI收割

来源：长春光学精密机械与物理研究所

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