中国科学院机构知识库网格系统: Fabrication of high-efficiency ultraviolet blazed gratings by use of direct Ar2-CHF3 ion-beam etching through a rectangular photoresist mask (EI CONFERENCE)

中国科学院机构知识库网格

Chinese Academy of Sciences Institutional Repositories Grid

Fabrication of high-efficiency ultraviolet blazed gratings by use of direct Ar2-CHF3 ion-beam etching through a rectangular photoresist mask (EI CONFERENCE)

文献类型：会议论文


作者	Tan X.
出版日期	2011
会议名称	International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, May 24, 2011 - May 26, 2011
会议地点	Beijing, China
关键词	In ultraviolet spectroscopy groove irregularity and surface roughness of nanometer magnitude can cause a significant loss of diffraction efficiency. Therefore there is a constant need to improve the diffraction efficiency. A blazed grating can concentrate most of the light intensity into a desired diffraction order it is important to control the groove shape precisely so it is the optimum choice among gratings of different kinds of profile. As the operating wavelength of most UV spectral applications is less than 200 nm especially the blaze angle and the apical angle. We have presented a direct shaping method to fabricate EUV blazed gratings by using an ion-beam mixture of Ar+ and CHF2 +to etch K9 glass with a rectangular photoresist mask. With this method the required blaze angle is small we have succeeded in fabricating well-shaped UV blazed gratings with a 1200 line/mm groove density and 8.54 blaze angles and 1200 line/mm groove density and 11.68 blaze angles and the metrical efficiency is about 81% and 78%. The good performance of the gratings was verified by diffraction efficiency measurements. When one uses the etching model the conditions on the ion-beam grazing incident angle and the CHF3partial pressure should be noted. Besides since the etched groove shape depends on the aspect ratio of the photoresist mask ridge if we wish to fabricate larger gratings with this method we must improve the uniformity of the photoresist mask before ion-beam etching. 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).
收录类别	EI
源URL	[http://ir.ciomp.ac.cn/handle/181722/33731]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Tan X.. Fabrication of high-efficiency ultraviolet blazed gratings by use of direct Ar2-CHF3 ion-beam etching through a rectangular photoresist mask (EI CONFERENCE)[C]. 见:International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, May 24, 2011 - May 26, 2011. Beijing, China.

入库方式： OAI收割

来源：长春光学精密机械与物理研究所

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