Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer
文献类型：期刊论文
| 作者 | Wang H (Wang H.) ; Jiang DS (Jiang D. S.) ; Jahn U (Jahn U.) ; Zhu JJ (Zhu J. J.) ; Zhao DG (Zhao D. G.) ; Liu ZS (Liu Z. S.) ; Zhang SM (Zhang S. M.) ; Yang H (Yang H.) |
| 刊名 | thin solid films
 |
| 出版日期 | 2010 |
| 卷号 | 518期号:17页码:5028-5031 |
| 关键词 | Gallium Nitride Indium Gallium Nitride Cathodeluminescence X-ray Diffraction Metal-Organic Chemical Vapor Deposition |
| 通讯作者 | wang, h, chinese acad sci, state key lab integrated optoelect, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wangh@semi.ac.cn |
| 合作状况 | 国内 |
| 英文摘要 | we have investigated the optical properties of thick ingan film grown on gan by cathodeluminescence (cl) spectroscopy. it is found that there is obvious in composition variation in both growth and lateral direction of ingan film. the depth distribution of in composition is closely related to the strain relaxation process of ingan film. accompanied with the relaxation of compressive strain, the in composition of ingan layer increases and the cl peak energy shifts towards red. moreover, a rather apparent in composition fluctuation is found in the relaxed upper part of ingan layer as confirmed by cl imaging.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17t01:03:33z no. of bitstreams: 1 cathodoluminescence study on in composition inhomogeneity of thick ingan layer.pdf: 671859 bytes, checksum: 6224979c84e5891675011fbc178e1039 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17t01:07:17z (gmt) no. of bitstreams: 1 cathodoluminescence study on in composition inhomogeneity of thick ingan layer.pdf: 671859 bytes, checksum: 6224979c84e5891675011fbc178e1039 (md5); made available in dspace on 2010-08-17t01:07:17z (gmt). no. of bitstreams: 1 cathodoluminescence study on in composition inhomogeneity of thick ingan layer.pdf: 671859 bytes, checksum: 6224979c84e5891675011fbc178e1039 (md5) previous issue date: 2010; this work is supported by the national natural science fund of china (grant nos. 60976045, 60506001, 60836003 and 60776047), national basic research program (2007cb936700) and the national science foundation for distinguished young scholars under grant no. 60925017. the authors would like to thank the beijing synchrotron radiation facility (bsrf) for the assistance in thin film characterization.; 国内 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | this work is supported by the national natural science fund of china (grant nos. 60976045, 60506001, 60836003 and 60776047), national basic research program (2007cb936700) and the national science foundation for distinguished young scholars under grant no. 60925017. the authors would like to thank the beijing synchrotron radiation facility (bsrf) for the assistance in thin film characterization. |
| 语种 | 英语 |
| 公开日期 | 2010-08-17 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13476]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang H ,Jiang DS ,Jahn U ,et al. Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer[J]. thin solid films,2010,518(17):5028-5031. |
| APA | Wang H .,Jiang DS .,Jahn U .,Zhu JJ .,Zhao DG .,...&Yang H .(2010).Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer.thin solid films,518(17),5028-5031. |
| MLA | Wang H ,et al."Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer".thin solid films 518.17(2010):5028-5031. |
入库方式： OAI收割
来源：半导体研究所
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