Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction
文献类型：期刊论文
| 作者 | Guo X (Guo Xi) ; Wang YT (Wang Yu-Tian) ; Zhao DG (Zhao De-Gang) ; Jiang DS (Jiang De-Sheng) ; Zhu JJ (Zhu Jian-Jun) ; Liu ZS (Liu Zong-Shun) ; Wang H (Wang Hui) ; Zhang SM (Zhang Shu-Ming) ; Qiu YX (Qiu Yong-Xin) ; Xu K (Xu Ke) ; Yang H (Yang Hui) |
| 刊名 | chinese physics b
 |
| 出版日期 | 2010 |
| 卷号 | 19期号:7页码:art. no. 076804 |
| 关键词 | in-plane grazing incidence x-ray diffraction gallium nitride mosaic structure biaxial strain CHEMICAL-VAPOR-DEPOSITION LATTICE-CONSTANTS ALN |
| 通讯作者 | guo, x, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: guox@semi.ac.cn |
| 合作状况 | 国内 |
| 英文摘要 | this paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented gan thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. the results are analysed and compared with a complementary out-of-plane x-ray diffraction technique. the twist of the gan mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method. the method for directly determining the in-plane lattice parameters of the gan layers is also presented. combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed gan films. the gan epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of -0.89 gpa.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17t01:28:11z no. of bitstreams: 1 microstructure and strain analysis of gan epitaxial films using in-plane grazing incidence x-ray diffraction.pdf: 821334 bytes, checksum: d7708ab795195c6ddc1eae973642303e (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17t01:29:55z (gmt) no. of bitstreams: 1 microstructure and strain analysis of gan epitaxial films using in-plane grazing incidence x-ray diffraction.pdf: 821334 bytes, checksum: d7708ab795195c6ddc1eae973642303e (md5); made available in dspace on 2010-08-17t01:29:55z (gmt). no. of bitstreams: 1 microstructure and strain analysis of gan epitaxial films using in-plane grazing incidence x-ray diffraction.pdf: 821334 bytes, checksum: d7708ab795195c6ddc1eae973642303e (md5) previous issue date: 2010; project supported by the national natural science foundation of china (grant nos. 60506001, 60776047, 60976045 and 60836003), the national basic research programme of china (grant no. 2007cb936700) and the national science foundation for distinguished young scholars, china (grant no. 60925017).; 国内 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | project supported by the national natural science foundation of china (grant nos. 60506001, 60776047, 60976045 and 60836003), the national basic research programme of china (grant no. 2007cb936700) and the national science foundation for distinguished young scholars, china (grant no. 60925017). |
| 语种 | 英语 |
| 公开日期 | 2010-08-17 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13482]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Guo X ,Wang YT ,Zhao DG ,et al. Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction[J]. chinese physics b,2010,19(7):art. no. 076804. |
| APA | Guo X .,Wang YT .,Zhao DG .,Jiang DS .,Zhu JJ .,...&Yang H .(2010).Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction.chinese physics b,19(7),art. no. 076804. |
| MLA | Guo X ,et al."Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction".chinese physics b 19.7(2010):art. no. 076804. |
入库方式： OAI收割
来源：半导体研究所
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