980nm high power Vertical External-cavity Surface-emitting Semiconductor Lasers (VECSEL) (EI CONFERENCE)
文献类型：会议论文
| 作者 | Ning Y.-Q. ; Wang L.-J.; Wang L.-J.; Qin L.
|
| 出版日期 | 2005 |
| 会议名称 | Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005 |
| 会议地点 | Shanghai, China |
| 关键词 | We describe the design fabrication and calculation characteristics of the 980nm high-power diode-pumped vertical external-cavity surface-emitting laser(VECSEL).From our calculation the VECSEL with active region of InGaAs/GaAsP/AlGaAs system can operate near 1w in a single transverse mode. |
| 收录类别 | EI |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/33831]  |
| 专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文 |
| 推荐引用方式 GB/T 7714 | Ning Y.-Q.,Wang L.-J.,Wang L.-J.,et al. 980nm high power Vertical External-cavity Surface-emitting Semiconductor Lasers (VECSEL) (EI CONFERENCE)[C]. 见:Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005. Shanghai, China. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。