Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhou ZW (Zhou Zhiwen) ; He JK (He Jingkai) ; Wang RC (Wang Ruichun) ; Li C (Li Cheng) ; Yu JZ (Yu Jinzhong) |
| 刊名 | optics communications
 |
| 出版日期 | 2010 |
| 卷号 | 283期号:18页码:3404-3407 |
| 关键词 | Germanium Hererojunction Photodiode Tensile strain |
| 通讯作者 | zhou, zw, shenzhen inst informat & technol, dept elect commun technol, shenzhen 518029, guangdong, peoples r china. 电子邮箱地址: zhouzw@sziit.com.cn |
| 合作状况 | 国内 |
| 英文摘要 | we report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. the diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees c without thermal annealing and allowing the integration with standard silicon processes. due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between ge and si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial ge films. the diode with a responsivity of 0.23 a/w at 1.55 mu m wavelength and a bulk dark current density of 10 ma/cm(2) is demonstrated. these diodes with high performances and full compatibility with the cmos processes enable monolithically integrating microphotonics and microelectronics on the same chip.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17t02:32:07z no. of bitstreams: 1 normal incidence p-i-n ge heterojunction photodiodes on si substrate grown by ultrahigh vacuum chemical vapor deposition.pdf: 325358 bytes, checksum: bda9357acca18f6b0b146466350228a3 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17t02:54:12z (gmt) no. of bitstreams: 1 normal incidence p-i-n ge heterojunction photodiodes on si substrate grown by ultrahigh vacuum chemical vapor deposition.pdf: 325358 bytes, checksum: bda9357acca18f6b0b146466350228a3 (md5); made available in dspace on 2010-08-17t02:54:12z (gmt). no. of bitstreams: 1 normal incidence p-i-n ge heterojunction photodiodes on si substrate grown by ultrahigh vacuum chemical vapor deposition.pdf: 325358 bytes, checksum: bda9357acca18f6b0b146466350228a3 (md5) previous issue date: 2010; this work was partly supported by the national basic research program of china (973 program) under grant no. 2007cb613404 and program for new century excellent talents in university.; 国内 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | this work was partly supported by the national basic research program of china (973 program) under grant no. 2007cb613404 and program for new century excellent talents in university. |
| 语种 | 英语 |
| 公开日期 | 2010-08-17 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13490]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhou ZW ,He JK ,Wang RC ,et al. Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition[J]. optics communications,2010,283(18):3404-3407. |
| APA | Zhou ZW ,He JK ,Wang RC ,Li C ,&Yu JZ .(2010).Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition.optics communications,283(18),3404-3407. |
| MLA | Zhou ZW ,et al."Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition".optics communications 283.18(2010):3404-3407. |
入库方式： OAI收割
来源：半导体研究所
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