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The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE)

文献类型：会议论文

作者Li J.; Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Li J.; Li J.; Qin L.
出版日期2007
会议名称Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007
会议地点Wuhan, China
关键词The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs This three QWs structure can add the quantum state of QW increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.
收录类别EI
源URL[http://ir.ciomp.ac.cn/handle/181722/33934]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式
GB/T 7714		 Li J.,Wang L.-J.,Wang L.-J.,et al. The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE)[C]. 见:Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007. Wuhan, China.

入库方式： OAI收割

来源：长春光学精密机械与物理研究所

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