中国科学院机构知识库网格系统: Surface modification of SiC mirror by IARE method (EI CONFERENCE)

中国科学院机构知识库网格

Chinese Academy of Sciences Institutional Repositories Grid

Surface modification of SiC mirror by IARE method (EI CONFERENCE)

文献类型：会议论文


作者	Gao J.
出版日期	2011
会议名称	7th International Conference on Thin Film Physics and Applications, September 24, 2010 - September 27, 2010
会议地点	Shanghai, China
关键词	A method to prepare high quality SiC coating at low temperature using large aperture E-beam evaporation PVD equipment with ion assistance was developed for the surface modification of SiC mirror for space projects. This method was called Ion Assisted Reactive Evaporation (IARE). The modified SiC coating was prepared using CH4 and Si with Kaufman ion source by IARE at 300C and it had met the requirements of applications. The SiC coating prepared by this method was amorphous. It was dense homogeneous and easy to be polished. The surface modification of a SiC mirror was carried out using SiC coating by this method and achieved a fine surface modification effect. The surface roughness (rms) of the SiC substrate was reduced to 0.862nm the scattering coefficient was reduced to 2.79% and the reflectance coated with Ag film was improved simultaneously after the surface modification. The effect of surface modification using SiC coating was close to that of using Si coating. It can be drawn that this technological method to preparation SiC coating for the surface modification of SiC mirror is reasonable and effective. 2011 SPIE.
收录类别	EI
源URL	[http://ir.ciomp.ac.cn/handle/181722/33957]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Gao J.. Surface modification of SiC mirror by IARE method (EI CONFERENCE)[C]. 见:7th International Conference on Thin Film Physics and Applications, September 24, 2010 - September 27, 2010. Shanghai, China.

入库方式： OAI收割

来源：长春光学精密机械与物理研究所

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