Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN
文献类型：期刊论文
| 作者 | Jiang F (Jiang Fang) ; Cai LE (Cai Li-E) ; Zhang JY (Zhang Jiang-Yong) ; Zhang BP (Zhang Bao-Ping) |
| 刊名 | physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2010 |
| 卷号 | 42期号:9页码:2420-2423 |
| 关键词 | High reflective p-GaN AES Optimal conditions |
| 合作状况 | 国内 |
| 英文摘要 | a metallization scheme of ni/ag/ti/au has been developed for obtaining high reflective contacts on p-type gan. in order to find optimal conditions to get a high reflectivity, we studied samples with various ni thicknesses, annealing temperatures and annealing times. by annealing at 500 degrees c for 5 min in an o-2 ambient, a reflectivity as high as 94% was obtained from ni/ag/ti/au (1/120/120/50 nm). the effects of ti layers on the suppression of ag agglomeration were investigated by using auger electron spectroscopy (aes). from aes depth profiles, it is clear that ti acts as a diffusion barrier to prevent au atoms from diffusing into the ag layer, which is important in the formation of high reflectivity.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-07t13:02:49z no. of bitstreams: 1 formation of high reflective niagtiau contact on p-gan.pdf: 674221 bytes, checksum: 117f4c3afc4981d63ef5d1908c02db01 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-07t13:11:26z (gmt) no. of bitstreams: 1 formation of high reflective niagtiau contact on p-gan.pdf: 674221 bytes, checksum: 117f4c3afc4981d63ef5d1908c02db01 (md5); made available in dspace on 2010-09-07t13:11:26z (gmt). no. of bitstreams: 1 formation of high reflective niagtiau contact on p-gan.pdf: 674221 bytes, checksum: 117f4c3afc4981d63ef5d1908c02db01 (md5) previous issue date: 2010; 国内 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-09-07 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13525]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Jiang F ,Cai LE ,Zhang JY ,et al. Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN[J]. physica e-low-dimensional systems & nanostructures,2010,42(9):2420-2423. |
| APA | Jiang F ,Cai LE ,Zhang JY ,&Zhang BP .(2010).Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN.physica e-low-dimensional systems & nanostructures,42(9),2420-2423. |
| MLA | Jiang F ,et al."Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN".physica e-low-dimensional systems & nanostructures 42.9(2010):2420-2423. |
入库方式： OAI收割
来源：半导体研究所
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