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808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE)

文献类型：会议论文

作者Wang Y.; Wang L.; Wang L.; Wang L.; Liu Y.; Liu Y.; Liu Y.; Wang C.; Qin L.; Wang Y.
出版日期2008
会议名称Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008
会议地点Hangzhou, China
关键词808nm high power diode lasers which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers and they could lead to new applications where space weight and electrical power are critical. High efficiency devices generate less waste heat which means less strain on the cooling system and more tolerance to thermal conductivity variation a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars we fabricate a 1 3 arrays the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A the slope efficiency is 3.37 W/A. 2008 SPIE.
收录类别EI
源URL[http://ir.ciomp.ac.cn/handle/181722/34025]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式
GB/T 7714		 Wang Y.,Wang L.,Wang L.,et al. 808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE)[C]. 见:Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008. Hangzhou, China.

入库方式： OAI收割

来源：长春光学精密机械与物理研究所

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