Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures
文献类型：期刊论文
| 作者 | Ding JQ (Ding, Jieqin) ; Wang XL (Wang, Xiaoliang) ; Xiao HL (Xiao, Hongling) ; Wang CM (Wang, Cuimei) ; Yin HB (Yin, Haibo) ; Chen H (Chen, Hong) ; Feng C (Feng, Chun) ; Jiang LJ (Jiang, Lijuan) |
| 刊名 | physica b-condensed matter
 |
| 出版日期 | 2012 |
| 卷号 | 407期号:18页码:3920-3924 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-03-27 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23826]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Ding JQ ,Wang XL ,Xiao HL ,et al. Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures[J]. physica b-condensed matter,2012,407(18):3920-3924. |
| APA | Ding JQ .,Wang XL .,Xiao HL .,Wang CM .,Yin HB .,...&Jiang LJ .(2012).Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures.physica b-condensed matter,407(18),3920-3924. |
| MLA | Ding JQ ,et al."Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures".physica b-condensed matter 407.18(2012):3920-3924. |
入库方式： OAI收割
来源：半导体研究所
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