Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
文献类型：期刊论文
| 作者 | Luan CB (Luan, Chongbiao) ; Lin ZJ (Lin, Zhaojun) ; Lv YJ (Lv, Yuanjie) ; Meng LG (Meng, Lingguo) ; Yu YX (Yu, Yingxia) ; Cao ZF (Cao, Zhifang) ; Chen H (Chen, Hong) ; Wang ZG (Wang, Zhanguo) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2012 |
| 卷号 | 101期号:11页码:113501 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-03-27 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23828]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Luan CB ,Lin ZJ ,Lv YJ ,et al. Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors[J]. applied physics letters,2012,101(11):113501. |
| APA | Luan CB .,Lin ZJ .,Lv YJ .,Meng LG .,Yu YX .,...&Wang ZG .(2012).Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors.applied physics letters,101(11),113501. |
| MLA | Luan CB ,et al."Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors".applied physics letters 101.11(2012):113501. |
入库方式： OAI收割
来源：半导体研究所
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