Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells
文献类型：期刊论文
| 作者 | Gu YX (Gu, Yong-Xian) ; Yang XG (Yang, Xiao-Guang) ; Ji HM (Ji, Hai-Ming) ; Xu PF (Xu, Peng-Fei) ; Yang T (Yang, Tao) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2012 |
| 卷号 | 101期号:8页码:081118 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-04-02 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23843]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Gu YX ,Yang XG ,Ji HM ,et al. Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells[J]. applied physics letters,2012,101(8):081118. |
| APA | Gu YX ,Yang XG ,Ji HM ,Xu PF ,&Yang T .(2012).Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells.applied physics letters,101(8),081118. |
| MLA | Gu YX ,et al."Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells".applied physics letters 101.8(2012):081118. |
入库方式： OAI收割
来源：半导体研究所
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