中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique

文献类型:期刊论文

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作者Lu LW (Lu, Liwu); Su SC (Su, Shichen); Ling CC (Ling, Chi-Chung); Xu SJ (Xu, Shijie); Zhao DG (Zhao, Degang); Zhu JJ (Zhu, Jianjun); Yang H (Yang, Hui); Wang JN (Wang, Jiannong); Gey WK (Gey, Weikun)
刊名applied physics express ; APPLIED PHYSICS EXPRESS
出版日期2012 ; 2012
卷号5期号:9页码:091001
学科主题光电子学 ; 光电子学
收录类别SCI
语种英语 ; 英语
公开日期2013-04-02 ; 2013-04-02
源URL[http://ir.semi.ac.cn/handle/172111/23871]  
专题半导体研究所_光电子研究发展中心
推荐引用方式
GB/T 7714
Lu LW ,Su SC ,Ling CC ,et al. Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique, Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique[J]. applied physics express, APPLIED PHYSICS EXPRESS,2012, 2012,5, 5(9):091001, 091001.
APA Lu LW .,Su SC .,Ling CC .,Xu SJ .,Zhao DG .,...&Gey WK .(2012).Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique.applied physics express,5(9),091001.
MLA Lu LW ,et al."Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique".applied physics express 5.9(2012):091001.

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来源:半导体研究所

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