Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature
文献类型：期刊论文
| 作者 | Cui K (Cui, Kai) ; Ma WQ (Ma, Wenquan) ; Huang JL (Huang, Jianliang) ; Wei Y (Wei, Yang) ; Zhang YH (Zhang, Yanhua) ; Cao YL (Cao, Yulian) ; Gu YX (Gu, Yongxian) ; Yang T (Yang, Tao) |
| 刊名 | physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2012 |
| 卷号 | 45页码:173-176 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-04-02 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23850]  |
| 专题 | 半导体研究所_纳米光电子实验室 |
| 推荐引用方式 GB/T 7714 | Cui K ,Ma WQ ,Huang JL ,et al. Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature[J]. physica e-low-dimensional systems & nanostructures,2012,45:173-176. |
| APA | Cui K .,Ma WQ .,Huang JL .,Wei Y .,Zhang YH .,...&Yang T .(2012).Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature.physica e-low-dimensional systems & nanostructures,45,173-176. |
| MLA | Cui K ,et al."Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature".physica e-low-dimensional systems & nanostructures 45(2012):173-176. |
入库方式： OAI收割
来源：半导体研究所
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