中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Theoretical analyses on improved beam properties of GaSb-based 2.X-mu m quantum-well diode lasers with no degradation in laser parameters

文献类型:期刊论文

作者Wang YB (Wang Yong-Bin) ; Xu Y (Xu Yun) ; Song GF (Song Guo-Feng) ; Chen LH (Chen Liang-Hui)
刊名chinese physics b
出版日期2012
卷号21期号:8页码:084208
学科主题半导体材料
收录类别SCI
语种英语
公开日期2013-04-02
源URL[http://ir.semi.ac.cn/handle/172111/23862]  
专题半导体研究所_纳米光电子实验室
推荐引用方式
GB/T 7714
Wang YB ,Xu Y ,Song GF ,et al. Theoretical analyses on improved beam properties of GaSb-based 2.X-mu m quantum-well diode lasers with no degradation in laser parameters[J]. chinese physics b,2012,21(8):084208.
APA Wang YB ,Xu Y ,Song GF ,&Chen LH .(2012).Theoretical analyses on improved beam properties of GaSb-based 2.X-mu m quantum-well diode lasers with no degradation in laser parameters.chinese physics b,21(8),084208.
MLA Wang YB ,et al."Theoretical analyses on improved beam properties of GaSb-based 2.X-mu m quantum-well diode lasers with no degradation in laser parameters".chinese physics b 21.8(2012):084208.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。