中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

文献类型:期刊论文

作者Zhao DG (Zhao, D. G.) ; Jiang DS (Jiang, D. S.) ; Le LC (Le, L. C.) ; Wu LL (Wu, L. L.) ; Li L (Li, L.) ; Zhu JJ (Zhu, J. J.) ; Wang H (Wang, H.) ; Liu ZS (Liu, Z. S.) ; Zhang SM (Zhang, S. M.) ; Jia QJ (Jia, Q. J.) ; Yang H (Yang, Hui)
刊名journal of alloys and compounds
出版日期2012
卷号540页码:46-48
学科主题光电子学
收录类别SCI
语种英语
公开日期2013-03-27
源URL[http://ir.semi.ac.cn/handle/172111/23808]  
专题半导体研究所_集成光电子学国家重点实验室
推荐引用方式
GB/T 7714
Zhao DG ,Jiang DS ,Le LC ,et al. Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition[J]. journal of alloys and compounds,2012,540:46-48.
APA Zhao DG .,Jiang DS .,Le LC .,Wu LL .,Li L .,...&Yang H .(2012).Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition.journal of alloys and compounds,540,46-48.
MLA Zhao DG ,et al."Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition".journal of alloys and compounds 540(2012):46-48.

入库方式: OAI收割

来源:半导体研究所

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