中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition

文献类型:期刊论文

作者Wang JM (Wang, Jiaming) ; Xu FJ (Xu, Fujun) ; Huang CC (Huang, Chengcheng) ; Xu ZY (Xu, Zhengyu) ; Zhang X (Zhang, Xia) ; Wang Y (Wang, Yan) ; Ge WK (Ge, Weikun) ; Wang XQ (Wang, Xinqiang) ; Yang ZJ (Yang, Zhijian) ; Shen B (Shen, Bo) ; Li W (Li, Wei) ; Wang WY (Wang, Weiying) ; Jin P (Jin, Peng)
刊名applied physics express
出版日期2012
卷号5期号:10页码:101002
学科主题光电子学
收录类别SCI
语种英语
公开日期2013-03-27
源URL[http://ir.semi.ac.cn/handle/172111/23797]  
专题半导体研究所_集成光电子学国家重点实验室
推荐引用方式
GB/T 7714
Wang JM ,Xu FJ ,Huang CC ,et al. Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition[J]. applied physics express,2012,5(10):101002.
APA Wang JM .,Xu FJ .,Huang CC .,Xu ZY .,Zhang X .,...&Jin P .(2012).Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition.applied physics express,5(10),101002.
MLA Wang JM ,et al."Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition".applied physics express 5.10(2012):101002.

入库方式: OAI收割

来源:半导体研究所

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