Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing
文献类型：期刊论文
| 作者 | Hu SX (Hu, Shaoxu) ; Han PD (Han, Peide) ; Wang S (Wang, Shuai) ; Mao X (Mao, Xue) ; Li XY (Li, Xinyi) ; Gao LP (Gao, Lipeng) |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2012 |
| 卷号 | 27期号:10页码:102002 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-03-27 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23818]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Hu SX ,Han PD ,Wang S ,et al. Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing[J]. semiconductor science and technology,2012,27(10):102002. |
| APA | Hu SX ,Han PD ,Wang S ,Mao X ,Li XY ,&Gao LP .(2012).Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing.semiconductor science and technology,27(10),102002. |
| MLA | Hu SX ,et al."Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing".semiconductor science and technology 27.10(2012):102002. |
入库方式： OAI收割
来源：半导体研究所
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