中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping

文献类型:期刊论文

作者Liu Z (Liu, Zhi) ; Hu WX (Hu, Weixuan) ; Su SJ (Su, Shaojian) ; Li C (Li, Chong) ; Li CB (Li, Chuanbo) ; Xue CL (Xue, Chunlai) ; Li YM (Li, Yaming) ; Zuo YH (Zuo, Yuhua) ; Cheng BW (Cheng, Buwen) ; Wang QM (Wang, Qiming)
刊名optics express
出版日期2012
卷号20期号:20页码:22327-22333
学科主题光电子学
收录类别SCI
语种英语
公开日期2013-03-27
源URL[http://ir.semi.ac.cn/handle/172111/23824]  
专题半导体研究所_集成光电子学国家重点实验室
推荐引用方式
GB/T 7714
Liu Z ,Hu WX ,Su SJ ,et al. Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping[J]. optics express,2012,20(20):22327-22333.
APA Liu Z .,Hu WX .,Su SJ .,Li C .,Li CB .,...&Wang QM .(2012).Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping.optics express,20(20),22327-22333.
MLA Liu Z ,et al."Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping".optics express 20.20(2012):22327-22333.

入库方式: OAI收割

来源:半导体研究所

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